Electron tunneling and transport in the high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="italic">T</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>superconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Y</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="no

Sun, A. G.; Paulius, L. M.; Gajewski, D. A.; Maple, M. B.; Dynes, R. C.

doi:10.1103/physrevb.50.3266

Cited by 74 publications

(42 citation statements)

References 15 publications

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“…Any kind of impurities produces in d-wave superconductors an effect analogous to pair-breaking by magnetic impurities in standard s-wave superconductors, leading to a rapid decrease of the critical temperature with increasing scattering rate, as measured for example by the residual resistivity. This is in contrast with some experiments showing a decrease of T c an order of magnitude slower than expected [5].…”

Section: Introductioncontrasting

confidence: 96%

Multiband model of high-Tcsuperconductors

Combescot¹

1998

Phys. Rev. B

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We propose an extension to other high Tc compounds of a model introduced earlier for YBCO. In the "self-doped" compounds we assume that the doping part ( namely the BiO, HgO, TlO planes in BSCCO, HBCCO, TBCCO respectively ) is metallic, which leads to a multiband model. This assumption is supported by band structure calculations. Taking a repulsive pairing interaction between these doping bands and the CuO2 bands leads to opposite signs for the order parameter on these bands and to nodes whenever the Fermi surfaces of these bands cross. We show that in BSCCO the low temperature dependence of the penetration depth is reasonably accounted for. In this case the nodes are not located near the 45 o direction, which makes the experimental determination of the node locations an important test for our model. The situation in HBCCO and TBCCO is rather analogous to BSCCO. We consider the indications given by NMR and find that they rather favor a metallic character for the doping bands. Finally we discuss the cases of NCCO and LSCO which are not "self-doped" and where our model does not give nodes.

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Section: Introductioncontrasting

confidence: 96%

Multiband model of high-Tcsuperconductors

Combescot¹

1998

Phys. Rev. B

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“…This gives us greater control over the amount of damage in the weak link since T c suppression is controllable and reproducible for a variety of ion types and energies when the ions pass through the film. 18,19 Our devices resemble directly scribed electron beam junctions since both types of devices are interface free and operate at similar length scales. 20 Unlike the electron beam damaged devices that anneal at room temperature over a period of days or weeks, the ion beam damaged weak links show substantially greater stability at room temperature.…”

Section: Planar Thin Film Yba 2 Cu 3 O 7؊␦ Josephson Junctions Via Namentioning

confidence: 99%

Planar thin film YBa2Cu3O7−δ Josephson junctions via nanolithography and ion damage

Katz

Sun²,

Woods

et al. 1998

Applied Physics Letters

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We have developed a process to fabricate planar high-Tc Josephson junctions using nanolithography and a 200 keV ion implanter. Conduction occurs in the ab plane and is interface free. We can systematically tune devices to operate at temperatures between 1 K and the Tc of the undamaged superconducting material by varying the length of the weak link and by changing the amount of ion damage. All of the devices showed clear dc and ac Josephson effects. Measurement of R(T) and Ic(T) of the weak links revealed trends which were consistent with a proximity effect.

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“…Using TRIM code 12 and suitable assumptions, we have computed a gaussian-like distribution of defects centered on the 20 nm wide slit whose standard deviation is roughly 80 nm 13 , much smaller than a crude estimate of 150 nm or so 4 , and in good agreement with experimental observations : the normal state resistance measured corresponds to the expected width of the channel within a few percents, even for the 1 µm wide ones, confirming that the straggling is much smaller than this value ; based on the actual R(T) curve of a pristine channel, we have been able to compute the one of irradiated samples with a very good accuracy (Figure 3). The increase in resistivity and the decrease in T c as a function of the created defects have been taken from the literature 3,[14][15][16] . The resistance of the whole irradiated channel has been then calculated by integrating the resistivity over the defects distribution.…”

Section: /06/05mentioning

confidence: 99%

High-quality planar high-Tc Josephson junctions

Bergeal

Grison

Lesueur

et al. 2005

Applied Physics Letters

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Reproducible high-T c Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge (1 to 5 µm wide) is firstly designed by ion irradiating a c-axis-oriented YBa 2 Cu 3 O 7-δ film through a gold mask such as the non-protected part becomes insulating. A lower T c part is then defined within the bridge by irradiating with a much lower fluence through a narrow slit (20 nm) opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. This process can be used to produce complex Josephson circuits. a) Electronic

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Electron tunneling and transport in the high-TcsuperconductorY1
A. G. Sun
¹
,
L. M. Paulius
²
,
D. A. Gajewski
³

et al.

Cited by 74 publications

References 15 publications

Multiband model of high-Tcsuperconductors

Multiband model of high-Tcsuperconductors

Planar thin film YBa2Cu3O7−δ Josephson junctions via nanolithography and ion damage

High-quality planar high-Tc Josephson junctions

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Resources

About

Electron tunneling and transport in the high-TcsuperconductorY1A. G. Sun1, L. M. Paulius2, D. A. Gajewski3 et al.

Cited by 74 publications

References 15 publications

Multiband model of high-Tcsuperconductors

Multiband model of high-Tcsuperconductors

Planar thin film YBa2Cu3O7−δ Josephson junctions via nanolithography and ion damage

High-quality planar high-Tc Josephson junctions

Contact Info

Product

Resources

About

Electron tunneling and transport in the high-TcsuperconductorY1
A. G. Sun
¹
,
L. M. Paulius
²
,
D. A. Gajewski
³

et al.