2010
DOI: 10.1103/physrevb.81.241415
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Electron trapping in misfit dislocations of MgO thin films

Abstract: Misfit dislocations in a thin MgO/Mo͑001͒ film have been investigated by conductance and light-emission spectroscopy using scanning tunneling microscopy and electron-paramagnetic resonance ͑EPR͒ spectroscopy. The line defects exhibit a higher work function than the pristine MgO, being explained by their ability to trap electrons. The electron traps are associated with a nonstoichiometric defect composition in thin oxide films and attractive pockets in the Madelung potential in thicker ones. The latter traps ca… Show more

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Cited by 62 publications
(91 citation statements)
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“…Moreover, the surface density of those vacancies was found to be higher in MgO than in CaO films at similar doping levels, reflecting the higher V M formation energy in the latter case. Additional electron traps are known to be present along the dislocation lines of the MgO and CaO films [38], which render a more quantitative discussion at this point difficult. By dosing the dopants at particular stages of film growth we are able to control their position within the film, and with respect to the oxide surface.…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, the surface density of those vacancies was found to be higher in MgO than in CaO films at similar doping levels, reflecting the higher V M formation energy in the latter case. Additional electron traps are known to be present along the dislocation lines of the MgO and CaO films [38], which render a more quantitative discussion at this point difficult. By dosing the dopants at particular stages of film growth we are able to control their position within the film, and with respect to the oxide surface.…”
Section: Resultsmentioning
confidence: 99%
“…2(a)]. We note that the temperature effect is most pronounced for an intermediate film thickness (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30) and fades away for thicker films. Conversely, the band onset can be tuned by varying the film thickness and keeping the annealing temperature constant at 1000 K. This trend is 035418- 2 FIG.…”
Section: (E)mentioning
confidence: 89%
“…The limits in the oxygen activation are rather set by the total number of Mo ions in the oxide lattice, their mean separation from the surface, and their charge state. Note that the latter is largely controlled by the presence of parasitic electron traps in the film, such as the metal-oxide interface and electron-accepting point or line defects [24,25]. As electron transfer into the O 2 molecules was found to be efficient, the structural quality of our CaO layers is apparently high enough to maintain the donor character of the oxide [8].…”
Section: Interplay Between Electronic Structure and Adsorption Behmentioning
confidence: 93%
“…[9] Defects will definitely fulfill a key function with respect to the activation of either methane or oxygen by changing the electronic structure of the wide band gap magnesium oxide particularly with regard to facilitate the transfer of electrons between the solid surface and the adsorbed molecules, which undergo a redox reaction. [10][11][12][13][14][15] The present work addresses relations between the nature and abundance of morphological surface defects such as steps and corners on pure magnesium oxide and its reactivity in the oxidative coupling of methane.…”
Section: Li-doped Mgo Was Discovered By Lunsford Et Al As An Active mentioning
confidence: 99%