Electron trapping at interface states in SiO&lt;inf&gt;2&lt;/inf&gt;/4H-SiC and SiO&lt;inf&gt;2&lt;/inf&gt;/6H-SiC MOS capacitors

Basile, A. F.; Rozen, John; Chen, X. D.; Dhar, Sarit; Williams, John R.; Feldman, L. C.; Mooney, P. M.

doi:10.1109/isdrs.2009.5378028

2009 International Semiconductor Device Research Symposium 2009

DOI: 10.1109/isdrs.2009.5378028

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Electron trapping at interface states in SiO<inf>2</inf>/4H-SiC and SiO<inf>2</inf>/6H-SiC MOS capacitors

A. F. Basile

John Rozen

X. D. Chen

et al.

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Electron trapping at interface states in SiO<inf>2</inf>/4H-SiC and SiO<inf>2</inf>/6H-SiC MOS capacitors

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