Electron transport through cubic InGaN/AlGaN resonant tunneling diodes

Yahyaoui, N.; Sfina, N.; Nasrallah, S. Abdi-Ben; Lazzari, J.–L.; Saïd, M.

doi:10.1016/j.cpc.2014.08.006

Cited by 9 publications

(9 citation statements)

References 30 publications

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“…Several calculations have been carried out to address the effect of these internal fields on the ballistic transport in III-nitride double-barrier structures [36]. Most other simulation works have been focused on improving the peak-to-valley current ratio (PVCR) and peak current density of nitride RTDs by either introducing innovative layer structures or weakening the internal fields [35,[37][38][39][40][41][42][43][44][45][46][47][48][49].…”

Section: Resonant Tunneling In Iii-nitrides-simulation Approachesmentioning

confidence: 99%

“…Yahyaoui et al [48] designed the structure composed of three In 0.1 Ga 0.9 N quantum wells which were separated by two barriers Al 0.3 Ga 0.7 N. The emitter layer and the collector layer were n-type Al 0.15 Ga 0.85 N. All of the materials used in this structure were non-polarity cubic phase to eliminate the builtin field and the device achieved a PVCR of 1.99.…”

Section: Trimming Polarization Fieldmentioning

confidence: 99%

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III-nitrides based resonant tunneling diodes

Lin

Wang

Tong

et al. 2020

J. Phys. D: Appl. Phys.

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Resonant tunneling diodes are nano-devices which have characteristics of negative differential resistance. They are widely used in digital and analog circuits to reduce components and decrease power consumption. In recent years, resonant tunneling diodes have been found to be an important choice for implementing terahertz device. GaN-based resonant tunneling diodes have inherited the advantages of III-nitride, such as high operating frequency, high power, high temperature resistance, etc, which has become a research hotspot. This paper introduces the basic situation of resonant tunneling diodes, reviews the progress of simulation and experiment, analyzes the influence of polarization field, and presents the challenges. The analysis provided in this paper may help the audience to become more familiar with current research efforts, as well as to provide inspiration for future III-nitride quantum device designs.

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Section: Resonant Tunneling In Iii-nitrides-simulation Approachesmentioning

confidence: 99%

Section: Trimming Polarization Fieldmentioning

confidence: 99%

III-nitrides based resonant tunneling diodes

Lin

Wang

Tong

et al. 2020

J. Phys. D: Appl. Phys.

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“…The computation of the wave functions and the electron and heavy hole confinement energies for this SQW has been carried out by solving Schrödinger equation in the effective mass approximation[33] and by varying the thickness L w for three different α-Sn compositions in the substrates and keeping L b =7nm. Due to the large band-offset and both large electrons and holes confinement energies in such a W-like type-I single QW cell, we assumed the parabolic effective mass approximation with uncoupled energy bands.…”

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confidence: 99%

Stark shift of the absorption spectra in Ge/Ge1−Sn /Ge type-I single QW cell for mid-wavelength infra-red modulators

Yahyaoui

Sfina

Lazzari

et al. 2015

Superlattices and Microstructures

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For mid-wavelength infra-red (MWIR) modulation or detection applications, we propose α-Sn rich Ge/Ge 1-x Sn x /Ge a type-I single quantum wells (SQW) partially strain compensated on Ge 1-y Sn y relaxed layers grown onto (001)-oriented Ge substrate. Such elementary cells with W-like potential profiles of conduction and valence bands have been modeled by solving the one-dimensional Schrödinger equation under an applied external electrical field. First, strain effects on electrons, heavy holes (hh) and light holes (lh) energy bands for strained/relaxed Ge 1-x Sn x /Ge 1-y Sn y heterointerfaces are investigated using the modelsolid theory in the whole ranges (0  x, y  1) of Sn compositions. From the obtained band-discontinuities, band gaps and effective masses, Ge 1-y Sn y /Ge/Ge 0.80 Sn 0.20 /Ge/Ge 1-y Sn y cells are computed as a function of the Ge 0.80 Sn 0.20 well width for three compositions of the Ge 1-y Sn y buffer layer (y=0.05, 0.07 and 0.09) in order to get the optimum quantum confinement of electrons and holes levels while keeping a reasonable amount of averaged strain in the cell. The electric field effect on the absorption spectra is given. An absorption coefficient in the 6  to 3  10 3 cm −1 range is reasonably obtained for a SQW at room temperature with a rather large Stark shift of the direct transition between 0.46 and 0.38 eV (i.e., λ=3.26-2.70 μm) at large external fields (50 kV/cm). These characteristics are attractive for the design of MWIR optical modulators.

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“…The theoretical model used to describe the tunneling current density through the barriers, and the particle transmission through the MQW potential profile is based on the transfer matrix formalism [29,30] within the step approximation. In addition to high computational efficiency of this approach, this method is well adapted for our case.…”

Section: P-i-n Modeling and Current Simulationmentioning

confidence: 99%

Direct band gap In Ga1−As/Ge type II strained quantum wells for short-wave infrared p–i–n photodetector

et al. 2015

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a b s t r a c tWe theoretically investigate GaAs/Ge/InGaAs as a quantum wells for the design of short-wave infrared p-i-n photodetectors in which the quantum well Ge/InGaAs is the active region. At room temperature, strained Ge/In x Ga 1Àx As becomes a direct band gap when In composition x is lower than 2.5% and 5% respectively. We have calculated the electronic band parameters for the heterointerface Ge/In x Ga 1Àx As. Then, a type-II strain GaAs/Ge/In 0.35 Ga 0.65 As/GaAs quantum wells heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation as well as the absorption coefficient (>1.5 Â 10 4 cm À1 ). These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature in the range 1.3-1.55 lm. The electron transport in the GaAs/Ge/In 0.35 Ga 0.65 As/GaAs multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. The temperature dependence of dark current mechanisms and zero-bias resistance area product (R 0 A) have been analyzed. Extracted from current-voltage characteristics, R 0 A products above 3.6 Á 10 6 X cm 2 at 77 K were calculated, and the quantitative analysis of the J-V curves showed that the dark current density of Ge/In 0.35 Ga 0.65 As photodetector is dominated by generation-recombination processes. The suitability of the modeled photodetector is approved by its feasibility of achieving good device performance near room temperature operating at 1.55 lm. Quantum efficiency of $90% and responsivity $0.6 A/W, have been achieved.

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Electron transport through cubic InGaN/AlGaN resonant tunneling diodes

Cited by 9 publications

References 30 publications

III-nitrides based resonant tunneling diodes

III-nitrides based resonant tunneling diodes

Stark shift of the absorption spectra in Ge/Ge1−Sn /Ge type-I single QW cell for mid-wavelength infra-red modulators

Direct band gap In Ga1−As/Ge type II strained quantum wells for short-wave infrared p–i–n photodetector

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