Electron Transport Phenomena in Semiconductors

Askerov, B. M.

doi:10.1142/1926

Cited by 178 publications

(76 citation statements)

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“…1, a behaviour of the MR(B, T ) curves for Ni films can be explained by the competition of negative and positive contributions to MR. At T > 250 K the negative contribution dominated, exhibiting a linear increase of MR(B) modulus. The observed behaviour of negative--contribution MR with temperature and magnetic field could be attributed to the anisotropic magnetoresistance effect (AMR) due to scattering of the carriers on the magnetic spins of Ni atoms which are ordered at the temperature decrease [7]. At T < 200 K the films exhibited the usual positive Lorentz-like contribution to MR that increased with B and temperature lowering.…”

Section: Ni Filmsmentioning

confidence: 96%

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

et al. 2011

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Section: Ni Filmsmentioning

confidence: 96%

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

et al. 2011

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“…Adjusting the standard "orthodox" approach [15] for the calculation of the dissipative current in a 2DES (see, for example, Refs. 7,10,12,16,17), j D (E) can be presented in the form…”

Section: General Formulasmentioning

confidence: 99%

Absolute negative conductivity in two-dimensional electron systems associated with acoustic scattering stimulated by microwave radiation

Ryzhii

Vyurkov

2003

Phys. Rev. B

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We discuss the feasibility of absolute negative conductivity (ANC) in two-dimensional electron systems (2DES) stimulated by microwave radiation in transverse magnetic field. The mechanism of ANC under consideration is associated with the electron scattering on acoustic piezoelectric phonons accompanied by the absorption of microwave photons. It is demonstrated that the dissipative components of the 2DES dc conductivity can be negative (σxx = σyy < 0) when the microwave frequency Ω is somewhat higher than the electron cyclotron frequency Ωc or its harmonics. The concept of ANC associated with such a scattering mechanism can be invoked to explain the nature of the occurrence of zero-resistance "dissipationless" states observed in recent experiments.

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“…GaSb is a candidate semiconductor for the exploration of its strain effect due to its interesting band structure [6,7]. Although the sensors based on GaSb show a large strainsensitivity coefficient, they exhibit a significant temperature dependence of resistivity and strain-sensitivity coefficient.…”

Section: Introductionmentioning

confidence: 99%

“…These factors cause a number of difficulties in modeling and designing strain-gauge-type devices. Therefore, the investigation of potential semiconductor materials to be used as mechanical sensors with thermostable parameters is essential.GaSb is a candidate semiconductor for the exploration of its strain effect due to its interesting band structure [6,7]. Although the sensors based on GaSb show a large strainsensitivity coefficient, they exhibit a significant temperature dependence of resistivity and strain-sensitivity coefficient.…”

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Strain gauges of GaSbFeGa1.3 eutectic composites

et al. 2004

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A needle-shaped metallic FeGa 1.3 phase oriented in a specific direction and uniformly distributed within a GaSb matrix was grown by a vertical Bridgman method. Strain-gauge characteristics, such as strain-sensitivity coefficient (S), temperature coefficient of strain sensitivity (TCS) and temperature coefficient of resistance, of GaSb and GaSb-FeGa 1.3 eutectic alloy have been investigated in the range of 200 to 400 K under deformation up to strains of 1.3 × 10 −3 . The value of S of the GaSb-FeGa 1.3 composition is measured to be 40 ± 5 and its TCS is about 0.2 % deg −1 when the current is perpendicular to the needles and the needles are parallel to the plane of the gauge substrate. The strain-sensitivity characteristics are linear and hysteresis free in the investigated temperature range in the aforementioned direction. It was found that GaSb-FeGa 1.3 -based strain gauges possess better deformation characteristics than GaSb-based gauges. Semiconductor resistance strain gauges, which convert a mechanical stimulus into an electrical signal, are widely used in measuring stresses and strains in many components such as structural elements, machine parts and mechanical test samples [1,2]. Ge-, Si-and Ge-Si-based strain gauges have been widely utilized and their properties have been investigated [3][4][5]. However, these semiconductor sensors exhibit a high resistivity and a high strain-sensitivity coefficient as a function of temperature. Also, there is a nonlinear behavior with strain. These factors cause a number of difficulties in modeling and designing strain-gauge-type devices. Therefore, the investigation of potential semiconductor materials to be used as mechanical sensors with thermostable parameters is essential.GaSb is a candidate semiconductor for the exploration of its strain effect due to its interesting band structure [6,7]. Although the sensors based on GaSb show a large strainsensitivity coefficient, they exhibit a significant temperature dependence of resistivity and strain-sensitivity coefficient. Interestingly, the incorporation of FeGa 1.3 metallic phase in u Fax: +994-1239-59-61, E-mail: rashad@physics.ab.az the GaSb matrix causes distinctive features of the straingauge characteristics in this material. Such heterogeneous structures possess the system of a semiconductor-metal type of GaSb-FeGa alloy. In our previous study [8], microstructure, electrical and thermal properties of GaSb-FeGa 1.3 eutectic composition were revealed and features of electron and phonon processes were studied. In these systems, it is considered that the electrical resistivity of the semiconductormetal boundaries is affected by the amount of the deformation on the alloy. Also, by forming eutectic alloys, the interactions between atoms are weakened and the bond energy of valance electrons that is related to the essential redistribution of charge electron densities of the nearby atoms of all components on these boundaries diminishes. This may have some considerable effect on the strain-gauge characteristics of th...

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Electron Transport Phenomena in Semiconductors

Cited by 178 publications

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Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Absolute negative conductivity in two-dimensional electron systems associated with acoustic scattering stimulated by microwave radiation

Strain gauges of GaSbFeGa1.3 eutectic composites

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Electron Transport Phenomena in Semiconductors

Cited by 178 publications

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Magnetoresistance in n-Si/SiO2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Magnetoresistance in n-Si/SiO2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Absolute negative conductivity in two-dimensional electron systems associated with acoustic scattering stimulated by microwave radiation

Strain gauges of GaSbFeGa1.3 eutectic composites

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Product

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Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology

Magnetoresistance in n-Si/SiO₂/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology