Electron transport in silicon nanowires having different cross-sections

Abstract

Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.

A benchmark study of the Signed-particle Monte Carlo algorithm for the Wigner equation

“…This represents a step ahead toward the simulation of quantum struc-tures such as silicon nanowire devices [22][23][24][25], where the effects of phonon scattering and heating could be included [26][27][28][29][30][31][32][33]. These topics will be the tasks of future researches.…”

Wigner Monte Carlo simulation without discretization error of the tunneling rectangular barrier

“…The results are compared with the corresponding analytic solution for the Schrödinger equation, showing an excellent agreement as well as a low-cost computational effort. Future researchers will develop this MC methodology for the simulation of realistic devices, such as silicon nanowires according to the guidelines in [21][22][23][24][25].…”

A hierarchy of hydrodynamic models for silicon carbide semiconductors

“…The MEP gives a systematic way for obtaining constitutive relations, as successfully done in silicon based semiconductors [13][14][15][16][17][18][19][20], as well as for nanometric structures [21][22][23][24][25]. We assume that the electron gas is sufficiently dilute, then the entropy density can be taken as the classical limit of the expression arising in the Fermi statistics, i.e.…”