Electron Transport in InSb, InAs, and InP

Rode, D. L.

doi:10.1103/physrevb.3.3287

Cited by 278 publications

(106 citation statements)

References 54 publications

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“…The mobility starts to saturate at lower temperature at which point it becomes limited by scattering events related to the nanowire structure including planar defects. 15 Similar trends have been observed previously in InAs films, 42 InAs nanowires 15 and InAs-InP 43 and InAs-InAlAs 44 core-shell nanowires. Here we consider three different candidate mechanisms that could be causing this marked increase in mobility with antimony content: (i) the different intrinsic electrical properties of InAs 1−x Sb x as a function of Sb content; (ii) the different electrical properties of the WZ and ZB polytypes of InAs 1−x Sb x ; and (iii) the variation of the planar defect density.…”

Section: Electrical Transport In Inas 1−x Sb X Nanowiressupporting

confidence: 87%

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

et al. 2014

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We report the growth of InAs 1−x Sb x nanowires (0 ≤ x ≤ 0.15) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs 1−x Sb x nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs 0.85 Sb 0.15 nanowires than InAs nanowires. * To whom correspondence should be addressed † London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom ‡ Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom 1 arXiv:1402.3489v1 [cond-mat.mtrl-sci] Feb 2014Semiconductor nanowires are leading candidates for future applications in a wide variety of electronic, photonic and sensing devices. 1,2 III-V compound semiconductor nanowires including InAs 3 and GaN 4,5 have a number of potential functional advantages over elemental semiconductor nanowires including high mobility and direct bandgap. Furthermore the magnitude of the bandgap can be modulated by exploiting ternary compound semiconductors (such as InAsP 6 and AlGaAs 7 ), allowing the creation of heterostructure nanowires with axially-or radially-modulated electronic properties. Such bandgap engineering is in principle a more powerful tool for nanowire-based devices than thin-film-based devices since the radial relaxation of strain in nanowires allows the growth of heterostructures whose constituent compounds are significantly lattice-mismatched. 8,9 The growth of compound semiconductor nanowires directly onto single crystal silicon wafers would be advantageous, 10,11 because (i) it would allow integration of nanowire devices with the established silicon CMOS technology; and (ii) silicon wafers are orders of magnitude cheaper than their compound semiconductor counterparts. Compound semiconductor nanowires are, however, typically grown using the "vapor-liquid-solid" technique in which gold nanoparticle catalysts seed the growth. Gold cannot be combined with silicon since it forms trap states in the silicon bandgap. 12-14 Nickel has also been used to catalyze InAs nanowire growth on silicon 15 but these nanowires are not functional for direct integration as they grow following random orientations with respect to the substrate. There have therefore been many reports of nanowire growth without the use of heterocatalytic nanoparticle seeds [16][17][18][19][20][21] . In the case of the widely-studied narrow-bandgap semiconductor InAs, however, the absence of a heterocatalyst results in the nanowires displaying very high densities of defects including stacking faults, twin boundaries and polytypism, i.e. uncontrolled axial modulation of the crystal structure between the zinc-blende (cubic) and the wurtzite (hexagonal) polytypes of InAs. 17,21 This in turn leads to an undesirable suppression of the electron mobility. 22 In this letter, we investigate an approa...

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Section: Electrical Transport In Inas 1−x Sb X Nanowiressupporting

confidence: 87%

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

et al. 2014

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“…A similar expression as for the conductivity can be found for the product of Seebeck coefficient S and conductivity r, see (9). From (8) and (9) the Seebeck coefficient is trivially obtained S ¼ Sr r .…”

mentioning

confidence: 70%

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

Schmidt

Mensch

Karg

et al. 2014

Applied Physics Letters

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A method for determining charge carrier concentration, mobility, and relaxation time in semiconducting nanowires is presented. The method is based on measuring both the electrical conductivity and the Seebeck coefficient of the nanowire. With knowledge on the bandstructure of the material, Fermi level and charge carrier concentration can be deduced from the Seebeck coefficient. The ratio of measured conductivity and inferred charge carrier concentration then leads to the mobility, and using the Fermi level dependence of mobility one can finally obtain the relaxation time. Using this approach we exemplarily analyze the characteristics of an n-type InAs nanowire.

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“…in any semiconducting material 18 (while higher mobility values are reported in a very recent paper 19 , these values are measured at a lower temperature ~250 K and at a lower carrier density). In general, the mobility measured for any device in anisole is always approximately 100-250% higher than the mobility for the same device either measured in hexane or in air before suspension.…”

Section: Sample Fabrication and Measurementsmentioning

confidence: 99%

“…1). The liquids are non-polar solvents-hexane (κ = 1.9), toluene (2.3), anisole (4.3), as well as polar liquidsisopropanol (18), ethanol (25) and methanol (33). Large leakage currents prevented us from measuring the devices in solvents with higher κ, such as water (κ = 79).…”

Section: Sample Fabrication and Measurementsmentioning

confidence: 99%

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

et al. 2012

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Graphene with high carrier mobility µ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of Dirac fermions. An attractive approach to increase the mobility is to place graphene in an environment with high static dielectric constant κ that would screen the electric field due to the charged impurities present near graphene's surface. Here we investigate the effect of the dielectric environment of graphene and study electrical transport in multi-terminal graphene devices suspended in liquids with κ ranging from 1.9 to 33. For non-polar liquids (κ < 5), we observe a rapid increase of µ(κ), with roomtemperature mobility reaching ~60,000 cm 2 Vs − 1 for devices in anisole (κ = 4.3). We associate this trend with dielectric screening of charged impurities adsorbed on graphene. We observe much lower mobility µ~20,000 cm 2 Vs − 1 for devices in polar liquids (κ ≥ 18) and explain it by additional scattering caused by ions present in such liquids.

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Electron Transport in InSb, InAs, and InP

Cited by 278 publications

References 54 publications

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

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