Electron transport characteristics in dual gate-controlled 30 nm-thick silicon membrane

Abstract

The exploration of multi-gate-controlled electron transport characteristics is always a research focus in Si-based device development and optimization. In this work, we report individual and dual gate-controlled energy band regulations of 30 nm-thick Si membrane and the resulted electron transportations at 10 to 300 K. It is discovered that the fine energy band structure is a key element to determine electron transport behaviors in FDSOI. Furthermore, either the front or the back gate bias can modify the energy band bending and sub-band gap, change charged body distribution and intersub-band transition probability, and thus adjust electron mobility and device performance. This dual gate coupling effect together with the proposed gate-controlled sub-band structure model is confirmed by magnetotransport experiments at 1.6 K. Notably, our work presents the coupled gate controlling effects within ultrathin Si film, and gives a physical insight into electron structure modulating, which may promote the evolution of Si-based device applications in many domains.