Electron transport at the interface of organic semiconductors and hydroxyl-containing dielectrics

Jiang, Huihong; Huang, Zhuoting; Xue, Guobiao; Chen, Hongzheng; Li, Hanying

doi:10.1039/c8tc01343h

Cited by 13 publications

(8 citation statements)

References 52 publications

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“…The higher trapping efficiencies of the Hf, Zr, and Ti hybrid films was attributed to the larger amount of OH functionality, which has been identified as an electron trapping site in dielectrics (Figure S2, Supporting Information). [47] The electronic band structures of each of the hybrid films were characterized via ultra-violet photoelectron spectroscopy (UPS) and reflective electron energy loss spectroscopy (REELS; Figure S4, Supporting Information). [48,49] The aforementioned electrical properties of the hybrid films suggested that the Hf, Zr, and Ti-hybrid films could be used as a CTL, while the Si and Al-hybrid films were excellent candidates for the TDL and BDL, respectively.…”

Section: Resultsmentioning

confidence: 99%

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Kim

Lee

Shin

et al. 2021

Adv Funct Materials

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With the recent interest in data storage in flexible electronics, highly reliable charge trap-type organic-based non-volatile memory (CT-ONVM) has attracted much attention. CT-ONVM should have a wide memory window, good endurance, and long-term retention characteristics, as well as mechanical flexibility. This paper proposed CT-ONVM devices consisting of band-engineered organic-inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5-trimethyl-1,3,5,-trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10 4 cycles, and charge retention of up to 71% after 10 8 s even under the 2% strained condition. The CT-ONVM device using the hybrid dielectric stacks outperforms other organic-based charge trap memory devices and is even comparable in performance to conventional inorganic-based poly-silicon/oxide/nitride/oxide/silicon structures devices. The CT-ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.

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Section: Resultsmentioning

confidence: 99%

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Kim

Lee

Shin

et al. 2021

Adv Funct Materials

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“…Another study has considered that PVP as a hydroxyl-rich material could absorb water and cause surface polarization, which also induces a higher saturation current [24]. In addition, hydroxyl groups in the dielectrics have been found to intensively trap electrons and completely eliminate electron transport in a variety of structurally disordered organic semiconductors [37], which may be beneficial to increasing the saturation current.…”

Section: Resultsmentioning

confidence: 99%

The effect of air exposure on device performance of flexible C8-BTBT organic thin-film transistors with hygroscopic insulators

Xie

Liu

et al. 2020

Sci. China Mater.

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Organic thin film transistors (OTFTs) are normally sensitive to ambient conditions and show performance degradation in air. On the contrary, the performance of flexible 2,7-dioctyl[1] benzothieno [3,2-b][1]benzothiophene (C8-BTBT) OTFTs using cross-linked polymer layer, poly(4vinyl-phenol)-4,4'-(hexafluoroisopropylidene) diphthalic anhydride (PVP-HDA), as the dielectric layer can be improved in air conditions with 40% relative humidity. Under soaking in air with 40% relative humidity, the electrical behavior, surface morphology, and contact angle of the flexible C8-BTBT OTFTs using PVP-HAD as dielectric layer with three different thicknesses were investigated. It is found that, when the devices with 375 nm-thick PVP-HDA films are placed in 40% relative humidity air conditions for 6 h, the corrected average mobility (µ) can increase from 3.2 to 5.1 cm 2 V −1 s −1. Furthermore, the average threshold voltage (V th) changes from −12.4 to −9.3 V while keeping a constant ratio of I on /I off = 10 4. These results indicate that the flexible C8-BTBT OTFTs with PVP-HDA dielectric layer exhibit interesting application prospects.

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“…Decent electron mobility (>1 cm 2 V –1 s –1 ) was maintained even though the hydroxyl-rich poly(4-vinylphenol) (PVP) and poly(vinyl alcohol) (PVA) were applied as the dielectric (Figure ). Moreover, electron mobility larger than 1 cm 2 V –1 s –1 could be obtained on pristine SiO 2 substrates with abundant surface hydroxyl groups. These findings are distinct from the stereotypes of hydroxyl group effects on electron transport.…”

Section: Insights For Organic Electronicsmentioning

confidence: 99%

Section: Insights For Organic Electronicsmentioning

confidence: 99%

Crystallization from a Droplet: Single-Crystalline Arrays and Heterojunctions for Organic Electronics

Peng

2021

Acc. Chem. Res.

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Conspectus Single crystals of organic semiconductors (OSCs) are believed to have both high mobility and intrinsic flexibility, making them promising candidates for flexible electronic/optoelectronic applications and being consistently pursued by researchers. The van der Waals force in OSC enables low-temperature solution processing of single crystals, but the relatively weak binding energy brings challenges in forming large, uniform, and defect-free single crystals. To promote the study on OSC single crystals, a generalized method that grows high-quality crystals in an easy-to-handle, time/resource-saving, and repeatable manner is apparently necessary. In 2012, Li et al. developed a droplet-pinned crystallization (DPC) method that uses a rather simple strategy to create a steadily receding contact line for the growth of OSC single crystals. Instead of setting up expensive equipment, controlling strict deposition parameters, or waiting for days or weeks for countable crystal seeds, the DPC method offers a time- and cost-effective way to obtain OSC single crystals for further study of the tendency of crystallization, single-crystal mobility, and molecular packing information. The DPC method is primarily a powerful tool for studying the charge-transport mechanisms in OSC single crystals. In pioneering work, high-mobility single crystals of both p-type 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) and n-type C60 materials were obtained. Driven by the demands from practical applications, we then focused on the general lagging of electron mobility in OSC materials. The ambipolar property of TIPS-PEN was studied, and a strong correlation between electron mobility and polar species (polar solvent residuals and surface hydroxyl groups) was observed. The latter further guided the harvest of electron mobility in a series of OSC materials. Undoubtfully, the facile DPC method accelerated these studies by providing a time-efficient, reliable, and repeatable testing platform. Additionally, flexibility on OSC materials and solvents, where not only one-component but also binary systems were allowed, is another critical integrity of the DPC method. The m-xylene/carbon tetrachloride binary solvent was proven to be efficient for growing ribbon-like C60 single crystals rather than needle-like crystals from typical one-component solvents. Afterward, a variety of OSC materials (including p-type, n-type, and ambipolar ones) and a series of solvents (including aromatic, aliphatic, and polar ones) were studied. The crystallization of OSC single crystals was primarily found at either the top liquid–air interface or the bottom solid–liquid interface. The interactions between OSC molecules and substrate surfaces were deduced as the qualitative determining factor. By utilizing the top interface crystallization, the two-step sequential deposition of single-crystalline OSC heterojunctions was enabled. Moreover, by selecting appropriate pairs of OSC materials that crystallize at separate interfaces, the facile one-step formation of...

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Electron transport at the interface of organic semiconductors and hydroxyl-containing dielectrics

Abstract: High electron transport can be obtained at the interface of organic semiconductors and hydroxyl-containing dielectrics.

Cited by 13 publications

References 52 publications

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

The effect of air exposure on device performance of flexible C8-BTBT organic thin-film transistors with hygroscopic insulators

Crystallization from a Droplet: Single-Crystalline Arrays and Heterojunctions for Organic Electronics

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