Electron transfer between semiconductor quantum dots via laser-induced resonance transitions

Tsukanov, A. V.; Openov, L. A.

doi:10.1134/1.1641139

Cited by 42 publications

(49 citation statements)

References 8 publications

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“…Note that this procedure enables us to calculate only the first-order correction term ∼ λ ′ 0 /ω to the RWA since account of the higher order terms makes the set (22) incompatible.…”

Section: Model and General Solutionmentioning

confidence: 99%

“…If the states localized in different QDs are viewed as the Boolean states 0 and 1, then, e. g., the electron transfer between them may be considered as the unitary operation NOT. The idea was initially proposed by Openov [18] and then developed further in the works [19,20,21,22,23,24]. The influence of strong electromagnetic fields on the tunnelling phenomena in severallevel nanostructures was studied in Refs.…”

Section: Introductionmentioning

confidence: 99%

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Rabi oscillations in the four-level double-dot structure under the influence of the resonant pulse

Tsukanov

2006

Phys. Rev. B

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We study theoretically the quantum dynamics of an electron in the symmetric four-level double-dot structure under the influence of the monochromatic resonant pulse. The probability amplitudes of the eigenstates relevant for the quantum dynamics are found from the solution of the non-stationary Schrödinger equation. The first-order correction term to the solution obtained through the rotating wave approximation is calculated. The threelevel double-dot dynamics and the two-level single-dot dynamics, as well as the off-resonant excitation process, are derived from the general formulae for corresponding choices of the pulse and structure parameters. The results obtained may be applied to the solid-state qubit design. PACS number(s): 03.67. Lx, 73.21.La, 78.67.Hc

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“…Note that this procedure enables us to calculate only the first-order correction term ∼ λ ′ 0 /ω to the RWA since account of the higher order terms makes the set (22) incompatible.…”

Section: Model and General Solutionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Rabi oscillations in the four-level double-dot structure under the influence of the resonant pulse

Tsukanov

2006

Phys. Rev. B

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“…One of the obstacles to the practical realization of scalable quantum computation in the system of quantum dots is that it is extremely difficult, if at all, to manufacture a set of quantum dots with identical or at least predetermined characteristics each. This complicates the issue, introducing the errors into the operations with qubits [17] and generating a need for numerous ancillary corrective gates. In this respect, it would be more reasonable to make use of natural atoms (instead of "artificial" ones) as the localization centers for the electrons carrying the quantum information.…”

Section: Introductionmentioning

confidence: 99%

Auxiliary-level-assisted operations with charge qubits in semiconductors

Openov

2005

J. Exp. Theor. Phys.

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We present a new scheme for rotations of a charge qubit associated with a singly ionized pair of donor atoms in a semiconductor host. The logical states of such a qubit proposed recently by Hollenberg et al. are defined by the lowest two energy states of the remaining valence electron localized around one or another donor. We show that an electron located initially at one donor site can be transferred to another donor site via an auxiliary molecular level formed upon the hybridization of the excited states of two donors. The electron transfer is driven by a single resonant microwave pulse in the case that the energies of the lowest donor states coincide or two resonant pulses in the case that they differ from each other. Depending on the pulse parameters, various one-qubit operations, including the phase gate, the NOT gate, and the Hadamard gate, can be realized in short times. Decoherence of an electron due to the interaction with acoustic phonons is analyzed and shown to be weak enough for coherent qubit manipulation being possible, at least in the proof-of-principle experiments on one-qubit devices.

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“…In the past decade, there has been an increasing interest in optical properties of quantum dot molecules (QDMs) and quantum wells (QWs), due to important role in optoelectronic devices. Recently, investigators have examined the effects of an external field and inter-dot tunnel coupling on the optical properties of QDs and QWs [22][23][24][25][26][27][28]. Quantum well semiconductors were chosen because of their advantage in flexible design, controllable interference strength, long dephasing times [29,30], large dephasing rates [~10 ps-1] [31] and large electric dipole moment which make them suitable for application in the optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Controlling the optical properties of a laser pulse at λ = 1.55μm in InGaAs\InP double coupled quantum well nanostructure

Shiri

Malakzadeh

2017

J. Eur. Opt. Soc.-Rapid Publ.

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Background: The transient and steady-state behaviour of the absorption and the dispersion of a probe field propagating at λ = 1.55μm through an InGaAs\InP double coupled quantum well are studied. The effect of terahertz signal excitation, electron tunnelling and incoherent pumping on the optical properties of the probe field is discussed. Methods: The linear dynamical properties of the double coupled quantum well by means of perturbation theory and density matrix method are discussed. Results: We show that the group velocity of a light pulse can be controlled from superluminal to subluminal or vice versa by controlling the rates of incoherent pumping field, terahertz signal and tunnelling between the quantum wells. The required switching time is calculated and we find it between 3 to 15 ps. Conclusions: In the terahertz (30~300 μm or 1~10THz) intersubband transition, the incoming photon energy is (4~41mev) and maybe in the order of electron thermal broadening (KT~6 meV-25 meV for 77 K -300 K). Therefore in the conventional structure, the incoming photon can directly excite the ground state electrons to higher energy levels. It is shown that the absorption and the dispersion of the probe field can be controlled by the intensity of terahertz signal and incoherent pumping field.

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Electron transfer between semiconductor quantum dots via laser-induced resonance transitions

Cited by 42 publications

References 8 publications

Rabi oscillations in the four-level double-dot structure under the influence of the resonant pulse

Rabi oscillations in the four-level double-dot structure under the influence of the resonant pulse

Auxiliary-level-assisted operations with charge qubits in semiconductors

Controlling the optical properties of a laser pulse at λ = 1.55μm in InGaAs\InP double coupled quantum well nanostructure

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