Electron states, effective masses and transverse effective charge of InAs quantum dots

Bekhouche, H.; Rahou, D.; Gueddim, A.; Abdelhafidi, M. K.; Bouarissa, N.

doi:10.1007/s11082-018-1576-z

Cited by 7 publications

(4 citation statements)

References 24 publications

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“…They are related by the expression [34] : respective counterparts for bulk material, it can be concluded that the capacity to store electromagnetic energy for MgTe quantum dots is weaker as compared to that of bulk MgTe. Note that this behavior of the dielectric constants for MgTe quantum dots is qualitatively in very good agreement with the findings reported for GaN [10], InSb [11] and InAs [14] quantum dots. Finally, we turn our attention to a fundamental physical quantity generally linked to the lattice dynamics of semiconductors and which determines the longdistance part of the force constants, the electron-optical-phonon coupling of Froehlich, parts of the piezoelectricity coefficients, etc.…”

Section: Resultssupporting

confidence: 90%

“…This behavior is qualitatively consistent with the findings reported in Refs. [10,11,14,23,25] for GaN, InSb, InAs, AlN and GaAs QDs. The refractive index knowledge is a master piece of information in the design of numerous heterojunction-based optoelectronic devices [27,28].…”

Section: Resultsmentioning

confidence: 99%

“…For this, the empirical pseudpotential method (EPM) is used. Note that this approach has been demonstrated to provide accurate results both for bulk-and nanosized materials [11][12][13][14] with low coast as regards processing efforts and calculation time as compared to first-principles methods.…”

Section: Introductionmentioning

confidence: 99%

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Electronic and optical properties of MgTe quantum dots: size effect

Elbahi,

Zitouni,

Gueddim

et al. 2024

SEES

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The size-dependent electronic and optical properties of magnesium telluride quantum dots are investigated using a pseudopotential scheme. The emphasis is focused on the effect of the size of the quantum dots on the undertaken properties. The quantum dot radius is considered to be varying in between 1 and 10 nm. It is found that the direct- and indirect band gaps as well as the electron and hole effective masses decrease non-linearly as the quantum dot radius is increased. However, the refractive index, the static- and high frequency dielectric as well as the transverse effective charge increase as the quantum dot size is augmented. The quantum confinement is found to play a major role for the studied physical quantities as long as the quantum dot radius remains less than 5 nm. This permits to tailor the electronic and optical properties of our material according to the desired application.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 99%

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Electronic and optical properties of MgTe quantum dots: size effect

Elbahi,

Zitouni,

Gueddim

et al. 2024

SEES

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“…This can be traced back to the effect of the quantum confinement phenomenon. More details about this phenomenon can be found in [24][25][26][27][28]. These results are qualitatively similar in trend to the requirements reported in [29][30][31][32][33][34][35].…”

Section: B Effect Of the Number Of Layers In The Stacksupporting

confidence: 87%

Porous Silicon Antireflective Coatings for Silicon Solar Cells

Mouafki

Bouaïcha

Hedibi

et al. 2022

Eng. Technol. Appl. Sci. Res.

Self Cite

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This study presents a numerical investigation of the reflectivity of a Single Anti-Reflective Layer (SARL) and a stack of antireflective layers made of porous silicon. The stack consists of a certain number of periods, and each period contains two layers with different porosity. The simulations were conducted using the well-known Stratified Medium Theory (SMT) framework and the effect of porosity was studied. The optimal value was determined at 60% for the SARL and 65/55% for the stack of 12 periods and 6 layers. The angle of incidence was found to have more influence on the stack reflection than on the SARL reflection. The results of this investigation show that porous silicon can be used as an effective anti-reflective coating for silicon solar cells.

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Structural, Spectroscopic, Electronic and Optical Properties of Novel Platinum Doped (PMMA/ZrO2) and (PMMA/Al2O3) Nanocomposites for Electronics Devices

Hazim

Abduljalil

2020

Trans. Electr. Electron. Mater.

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Electron states, effective masses and transverse effective charge of InAs quantum dots

Cited by 7 publications

References 24 publications

Electronic and optical properties of MgTe quantum dots: size effect

Electronic and optical properties of MgTe quantum dots: size effect

Porous Silicon Antireflective Coatings for Silicon Solar Cells

Structural, Spectroscopic, Electronic and Optical Properties of Novel Platinum Doped (PMMA/ZrO2) and (PMMA/Al2O3) Nanocomposites for Electronics Devices

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