Electron spin relaxation in a single InAs quantum dot measured by tunable nuclear spins

Dou, Xiaomin; Bq, Sun; Ds, Jiang; Ni, Hongjiang; Niu, Zhiwei

doi:10.1103/physrevb.84.033302

Cited by 20 publications

(30 citation statements)

References 27 publications

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“…1 (a), corresponding to the positively charged exciton (X + , 908.1 nm), exciton (X, 911.3 nm) and biexciton emission (XX, 912.5 nm). These emission lines have been identified previously using the polarization-resolved PL spectra [21,22]. In addition, a broadened emission peak is observed at a wavelength of 872.2 nm and is assigned to the two-dimensional exciton emission in the WL.…”

supporting

confidence: 60%

Plasmon-Field-Induced Metastable States in the Wetting Layer: Detected by the Fluorescence Decay Time of InAs/GaAs Single Quantum Dots

Chen

Huang

et al. 2020

ACS Photonics

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We report a new way to slow down the spontaneous emission rate of excitons in the wetting layer (WL) through radiative field coupling between the exciton emissions and the dipole field of metal islands. As a result, a long-lifetime decay process is detected in the emission of InAs/GaAs single quantum dots (QDs). It is found that when the separation distance from WL layer (QD layer) to the metal islands is around 20 nm and the islands have an average size of approximately 50 nm, QD lifetime may change from approximately 1 to 160 ns. The corresponding second-order autocorrelation function g (2) () changes from antibunching into a bunching and antibunching characteristics due to the existence of long-lived metastable states in the WL. This phenomenon can be understood by treating the metal islands as many dipole oscillators in the dipole approximation, which may cause destructive interference between the exciton dipole field and the induced dipole field of metal islands.

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supporting

confidence: 60%

Plasmon-Field-Induced Metastable States in the Wetting Layer: Detected by the Fluorescence Decay Time of InAs/GaAs Single Quantum Dots

Chen

Huang

et al. 2020

ACS Photonics

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“…where a is defined in Eq. (7). Equation (16) produces a good fit of the 2nd dip in Fig.2c (T store = 660ns) of the main text (red curve).…”

Section: Effect Of Quadrupole Couplingmentioning

confidence: 79%

Three-stage decoherence dynamics of an electron spin qubit in an optically active quantum dot

et al. 2015

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The control of discrete quantum states in solids and their use for quantum information processing is complicated by the lack of a detailed understanding of the mechanisms responsible for qubit decoherences [1]. For spin qubits in semiconductor quantum dots, phenomenological models of decoherence currently recognize two basic stages [2-4]; fast ensemble dephasing due to the coherent precession of spin qubits around nearly static but randomly distributed hyperfine fields (∼ 2 ns) [5-8] and a much slower process (> 1 µs) of irreversible relaxation of spin qubit polarization due to dynamics of the nuclear spin bath induced by complex many-body interaction effects [9]. We unambiguosly demonstrate that such a view on decoherence is greatly oversimplified; the relaxation of a spin qubit state is determined by three rather than two basic stages. The additional stage corresponds to the effect of coherent dephasing processes that occur in the nuclear spin bath that manifests itself by a relatively fast but incomplete non-monotonous relaxation of the central spin polarization at intermediate (∼ 750 ns) timescales. This observation changes our understanding of the electron spin qubit decoherence mechanisms in solid state systems.

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“…Currently, a promising system for these tasks are donor-bound electrons in ultrahigh quality, very weakly n-doped GaAs since the widely spaced, quasi-isolated electrons act as an ensemble of identical, individually localized atoms [5,6]. However, the ostensible catch of this approach is the inherent interaction with the nuclear spin bath which has been addressed in many different systems so far [7][8][9][10][11].In principle, there are different approaches to deal with the decoherence imposed via the hyperfine interaction. On the first sight, the most obvious way is to replace the isotopes carrying a nuclear spin with spinless isotopes like in 28 Si [12] but silicon has the drawback of an indirect gap.…”

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confidence: 99%

Interplay of Electron and Nuclear Spin Noise inn-Type GaAs

et al. 2015

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We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over 6 orders of magnitude from milliseconds to nanoseconds. The spin-noise spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V-based semiconductor systems. The experiment distinctly reveals the finite Overhauser shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies, features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear spin noise. DOI: 10.1103/PhysRevLett.115.176601 PACS numbers: 72.25.Rb, 72.70.+m, 78.47.db, 85.75.-d Harnessing coherence is one of the central topics in current research and attracts high interest due to the complex fundamental physics bridging quantum mechanics and statistics as well as due to prospective applications for information processing [1][2][3]. The solid state quantum states based upon the spin degree of freedom of confined carriers in semiconductors are at the forefront of many current research activities in this field. In this respect, optically addressable electron and hole spin quantum states in III-V-based semiconductor systems bear the beauty of efficient options for initialization, manipulation, and readout by light in combination with exceptional sample quality [4]. Currently, a promising system for these tasks are donorbound electrons in ultrahigh quality, very weakly n-doped GaAs since the widely spaced, quasi-isolated electrons act as an ensemble of identical, individually localized atoms [5,6]. However, the ostensible catch of this approach is the inherent interaction with the nuclear spin bath which has been addressed in many different systems so far [7][8][9][10][11].In principle, there are different approaches to deal with the decoherence imposed via the hyperfine interaction. On the first sight, the most obvious way is to replace the isotopes carrying a nuclear spin with spinless isotopes like in 28 Si [12] but silicon has the drawback of an indirect gap. Direct semiconductors with spinless isotopes like, e.g., isotopically purified II-VI systems have yet the drawback of inferior sample quality. In single III-V-based quantum dots, the hyperfine interaction can be reduced by either moving on to hole spins which show a diminished hyperfine interaction [13][14][15] or by polarizing the nuclei in order to make them less effective [16,17]. Besides that, the mutual interaction between carrier and nuclear spins is also strain dependent and strongly varying coupling strengths in such nanostructures result in a row of widely discussed pr...

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Electron spin relaxation in a single InAs quantum dot measured by tunable nuclear spins

Cited by 20 publications

References 27 publications

Plasmon-Field-Induced Metastable States in the Wetting Layer: Detected by the Fluorescence Decay Time of InAs/GaAs Single Quantum Dots

Plasmon-Field-Induced Metastable States in the Wetting Layer: Detected by the Fluorescence Decay Time of InAs/GaAs Single Quantum Dots

Three-stage decoherence dynamics of an electron spin qubit in an optically active quantum dot

Interplay of Electron and Nuclear Spin Noise inn-Type GaAs

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