Electron Spin Echo Decay Behaviours of Phosphorus Doped Silicon

Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations

“…This occurs because the nearest neighbor pairs, that usually give the strongest contribution to echo decay, are forming a magic angle with respect to B (001). 11 We now discuss the time dependence of the echo envelope. The echo decay without broadening fits well to the expression…”

Electron spin relaxation times of phosphorus donors in silicon

“…It was shown that T 2 saturates at considerably higher temperatures than T 1 and at considerably lower values (i.e. T 2 = 0.6 ms vs. T 1 = 3⋅10 3 s at 1.2 K) [7,15]. The mechanism of this saturation has not been explained.…”

“…No detailed temperature dependence study of T 2 has been reported, but data from several authors show that T 2 also varies over a wide range, from 0.3 µs at 25 K to 0.6 ms at 1.6 K [14,15]. It was shown that T 2 saturates at considerably higher temperatures than T 1 and at considerably lower values (i.e.…”

“…Figure 2 compares the 2-pulse ESE decays in isotopically-purified 28 Si:P-10 15 and in natural Si:P-10 15 (both measured with the magnitude detection approach). While the decay is nearly exponential in 28 Si:P, it is non-exponential in the natural Si:P, well-described by exp(−t/T 2 −t 3 /T S 3 ) [15]. With B 0 oriented along a (100) axis of the Si crystal, T S = 0.63 ms is estimated from the fit, and this T S is found to be temperature independent over the range 7-12 K.…”

Gates for the Kane quantum computer in the presence of dephasing

“…The nuclear spin and electronic spin decoherence times of P donors in Si is relatively long [10][11][12][13][14][15][16][17]. For example, recently a time of 60 ms was measured for the electronic dephasing time T 2 e [18].…”