Electron spectroscopy of the nickel-oxygen system

Kim, K.S.; Davis, Robert Earl

doi:10.1016/0368-2048(72)85014-x

Cited by 271 publications

(62 citation statements)

References 12 publications

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“…It shows a clear satellite structure around 860 eV. Similar satellite peaks were observed for nickel oxides previously and is ascribed to O(2 p) → Ni(3d) charge-transfer transition or hybridization [18,19]. The presence of the satellite peak in Ni-doped ZnO films indicates that nickel is present in an oxygen environment in the film.…”

Section: Xps Measurementssupporting

confidence: 81%

Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique

et al. 2007

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Zinc oxide (ZnO) and Ni-doped zinc oxide (ZnO:Ni) films are prepared by atom beam sputtering with an intent of growing transparent conducting oxide (TCO) material and understanding its physical properties. The crystalline phases of the films are identified by the grazing angle X-ray diffraction (GAXRD) technique. Thicknesses of the films are measured by ellipsometry. Chemical states of the elements present in the films are investigated by X-ray photoelectron spectroscopy (XPS), which indicates the presence of Ni in the ZnO environment in a divalent state. Average transmission across the ZnO:Ni film was determined to be ∼ 83% in the visible region, which is less than that (∼ 90%) of undoped ZnO films. The resistivity measured by van der Pauw technique of the ZnO:Ni film (∼ 9 × 10 −3 Ω cm) is two orders of magnitude smaller as compared to its undoped counterpart (1 Ω cm). For ZnO:Ni film an average carrier concentration of ∼ 1.4 × 10 19 cm −3 was observed by Hall measurements. Two important mechanisms reported in the literature viz. influence of d-d transition bands and electron scattering from crystallites/grains are discussed as the possible causes for the increase in conductivity on Ni doping in ZnO.

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Section: Xps Measurementssupporting

confidence: 81%

Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique

et al. 2007

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“…The peak position of the higher-energy component at 55.5eV agrees well with that of Ni3+ reported previously.10 11) The peak at around 53.5eV can be assigned to Ni2+, noting that the binding energy of Ni2+ in NiO is 53.5-54.0eV. 10 The Ni3+/Ni2+ abundance is calculated to be 52% for Ni3+ and 43% for Ni2+ from the ratio of the peak area, which agrees well with the result of the ioometric titra tion.…”

Section: Crystal Structure and Oxygen Deficiencysupporting

confidence: 78%

Structure, Oxygen Deficiency and Electrical Properties of Nd1-xYxNiO3-y (x=0, 0.1) Prepared by Sol-Gel Method

Fujihara

Kozuka

Yoko

1994

J. Ceram. Soc. Japan

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Perovskite-typeNdNiO3y and Nd.9Y.1NiO3y were prepared by heating the gel-derived powders at 700 in flowing oxygen or in air for relatively short heating time of 20h, and the lattice constants, oxygen content, valence state of Ni ions and temperature dependence of the electrical resistance were measured.A new oxygen-deficient orthorhombic phase NdNi3 was found, which has larger lattice constants and lower metal-semiconductor (M-S) transition temperature than the previously known NdNi3 phase. By substitut ing Y for Nd in the present NdNi3, the lattice con stants all decreased and the M-S transition tempera ture increased from 130 to 240K. The changes in the lattice constants and the M-S transition were dis cussed in terms of the ionic radius and the electronic bandwidth, respectively. Key-words: NdNiO3Perovskite, Sol-gel method, Oxygen deficiency, Mixed valence state, Metal-semiconductor transi tion 1. Introduction The discovery of high temperature superconduc tivity in copper oxide systems)-3) has aroused renewed attention to 3d transition metal oxide sys tems. In particular, the perovskite-related rare earth transition metal oxides with metallic conductivity are of great interest in understanding the mechanism of superconductivity and searching for new supercon ducting materials. Perovskite-type RNA's (R= rare earth element) show some different behavior of conductivity depending on R ions; that is, LaNi3 shows metallic conductivity at any temperature and the others with smaller R ions such as Pr, Nd or Sm exhibit transition from metallic to semiconducting or insulating with decreasing temperature.4), 5) The metal-semiconductor or insulator transition tempera ture increases with decreasing ionic radius of the rare earth.5The preparation of RNiO3 meets some difficulties except R=La for the two reasons. First, since the formation of RNi3 from R23 and NiO involves the

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“…The Ni 2p 3/2 peak values are 855.6 and 861.5 eV, and those for Ni 2p 1/2 are 873.5, and 880 eV. Three phases of Ni have been reported for the Ni-O system, which are NiO, Ni 2 O 3 , and Ni (having oxygen atom absorbed on its surface or purely Ni atom) [28][29][30]. The binding energy of metallic Ni 2p found in the Ni-O system is 852.5-852.9 eV [28,29,31], which was not visible in Fig.…”

Section: Resultsmentioning

confidence: 95%