1998
DOI: 10.1103/physrevb.58.8079
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Electron relaxation in disordered gold films

Abstract: The analysis of quantum corrections to magnetoconductivity of thin Au films responsible for by the effect of weak electron localization has made it possible to determine the temperature dependences of electron phase relaxation time in the temperature range 0.5--50 K for different degrees of crystal lattice disorder. The disorder was enhanced by irradiating the films in vacuum with 3.5 keV Ar ions. The experimental data clearly demonstrate that the contribution of electron-electron interaction to electron phase… Show more

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Cited by 18 publications
(22 citation statements)
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“…5), that corresponds to p = 2.1. This agrees with results for disordered but homogeneous enough gold films [11], where this has been convincingly attributed to influence of electron-phonon phase relaxation.…”
Section: Quantum Interference Effects In Conductivity Of the Film Stusupporting
confidence: 91%
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“…5), that corresponds to p = 2.1. This agrees with results for disordered but homogeneous enough gold films [11], where this has been convincingly attributed to influence of electron-phonon phase relaxation.…”
Section: Quantum Interference Effects In Conductivity Of the Film Stusupporting
confidence: 91%
“…Generally, the phase relaxation is determined by the two main contributions: electronelectron and electron-phonon interactions, so that τ −1 in = τ −1 ee + τ −1 ep , where τ ee and τ ep are the corresponding times. It was found for the electron-phonon interaction processes in disordered (R up to ≈ 500 Ω) gold films that τ −1 ep ∝ T p with exponent p between 2 and 2.8 [11]. According to Ref.…”
Section: Quantum Interference Effects In Conductivity Of the Film Stumentioning
confidence: 94%
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“…The exponent n depends on impurities, disorder, and sample dimensions: n = 2 in clean bulk crystals, while n =1 in disordered metals due to a phonon damping 30,31 and in metallic films. 32 Then Eq. ͑31͒ can be Fourier transformed into the Schrödinger equation using Fourier transform equation ͑13͒ of ͑ , t͒ϵ͑ , t͒cosh͑ / 2͒.…”
Section: B Low-temperature Electron-phonon Relaxation In Poor Metalsmentioning
confidence: 99%
“…In Ref. [24], the probability of the spin-orbit process on elastic (momentum) scattering was determined for defect scattering in 10-nm-thick Au films after irradiation of Ar ions. From weak localization magnetoresistance measurements, the ratio of τ to be 3.1 and 3.5 fs for n = 9.4 and 11.3 nm −2 , respectively [25].…”
mentioning
confidence: 99%