Abstract:The characterization of a-Si:H structure, using an electron beam in the keV range, is an interesting alternative to the more common photon beam techniques. a-Si:H device characterization by the determination of collection efficiency and other electronic parameters can be performed by variable energy EBIC method. But this requires an accurate knowledge of electron generation function and electron range in a-Si:H. In this paper we present an experimental determination of electron generation function and electron… Show more
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