The determination of the thickness and composition of thin layer and multilayer deposited on substrates is an important area in semiconductor research and thin-film technology. Electron probe microanalysis (EPMA), originally developed to determine the composition of the bulk samples at the micron scale, has become a well established technique to determine the compositions and the thickness of thin multilayer deposited on a substrate [1][2][3][4][5][6][7]. This technique can be used to determine the film thickness in a range of a few micrometers to a monolayer. Measurements of thin-layer thicknesses can also be performed by some others techniques such as Rutherford backscattering spectrometry (RBS), Atomic Force Microscopy (AFM), Secondary Ion Mass spectrometry (SIMS), optical interferometry (OI), x-ray fluorescence XRF etc. However in comparison to the other techniques and beyond the microscopic aspect of the method, and also the fact that it is a nondestructive technique, one of the advantages of the EPMA method is the opportunity to have simultaneously the layer thickness and the composition with accuracies similar to the one obtained on bulk sample. In addition, the equipment is available in many laboratories, i.e., a scanning electron microscope with an Energy Dispersive spectrometer (EDS) or more rarely an electron probe with Wavelength Dispersive spectrometers (WDS).The thin-multilayer method by EPMA is based on the comparison of the ratios of x-ray intensities (k-ratio) emitted by the elements of the various layers to those emitted from bulk standards under same experimental conditions. By varying the energy of the incident electrons, and thus the excitation depths, the different layers can be analyzed. Typical incident electrons energies of 5-40 keV have excitation depths from 0.2-10 μm. For an element of a thin layer at the surface, an increase of the energy of the incident electrons increases the excitation depths and as a result induces a decrease of the k-ratio. Similarly for a buried layer, an increase in the energy of the incident electrons results in an increase followed by a decrease of the k-ratio. The observed variation of the k-ratio with incident electron energy of the layers and of the substrate is the input of the EPMA quantification code, which determines the thickness of the layers by fitting the experimental k-ratios with a Monte Carlo (MC) simulation code [5,6] or with an analytical x-ray emission model [1][2][3][4]. The accuracy of the result is therefore directly dependent on the accuracy of the theoretical model. Since quantitative results are obtained with the help of numerical iterative procedures or with a manual trial and error approach, in practice, only analytical models are used. Monte Carlo (MC) simulation code, not always more accurate [7], but very time consuming, are generally used to optimize or assess analytical models.To convert the measured k-ratio from elements of the layers in thicknesses and compositions, an analytical x-ray emission model requires an accurate descr...