Electron-phonon scattering times in three-dimensional disordered Sb films

Lin, Juhn‐Jong; Li, Tsang-Jou; Wu, Ten Ming

doi:10.1103/physrevb.61.3170

Cited by 9 publications

(16 citation statements)

References 13 publications

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“…The latter is in good agreement with the e − p scattering rate obtained from an electrical measurement at 10 K. 13 The oscillation in the reflectivity is induced by the coherent nuclear motion of displacement Q͑t͒ through the susceptibility . The latter is in good agreement with the e − p scattering rate obtained from an electrical measurement at 10 K. 13 The oscillation in the reflectivity is induced by the coherent nuclear motion of displacement Q͑t͒ through the susceptibility .…”

Section: A Polarization Dependence Of Phonon Amplitudesupporting

confidence: 84%

Coherent A1g and Eg phonons of antimony

Ishioka

Kitajima

Misochko

2008

Journal of Applied Physics

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We report the ultrafast dynamics of the coherent A 1g and E g phonons of antimony as a function of temperature and optical polarization. Like in bismuth, the two phonon modes exhibit nearly / 2 difference in their initial phase, suggesting their different coupling strengths with photoexcited electrons. The dependence of the phonon amplitude on the optical polarization and temperature indicates the generation of the coherent A 1g phonons through both displacive and Raman processes, rather than a purely displacive one. In contrast, the generation of the coherent E g phonons can be understood within Raman framework alone.

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Section: A Polarization Dependence Of Phonon Amplitudesupporting

confidence: 84%

Coherent A1g and Eg phonons of antimony

Ishioka

Kitajima

Misochko

2008

Journal of Applied Physics

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“…It is clear that the obtained results are in excellent agreement with the theory recently developed for bulk semiconductors in weak screening ͑within the measured temperature of 4-30 K͒. 7 In disordered metallic systems, however, Belevtsev et al 18 have reported an occurrence of disordersuppressed relaxation in the pure-dirty transition of gold films, while Lin et al 19 have found that e-ph −1 exhibited constant temperature dependence in the form of e-ph −1 ϰ T 2.4Ϯ0.2 without notable disorder influence in Sb films.…”

supporting

confidence: 79%

“…The quadratic temperature dependence observed in the gold films 18 was attributed to the existence of Love's wave in the interface of the gold-sapphire system, which caused the same effect as reducing dimension; while the noninteger value of p extracted in Ref. 19 might be resulted from the characteristic microscopic structure in 3D disordered Sb films. The near cubic temperature dependence in the present experiment suggests normal e-ph scattering mechanism in semiconducting InN.…”

mentioning

confidence: 94%

“…In Sb films, no remarkable disorder effect on e-ph −1 was found in the region which was strictly restricted near q T l =1. 19 It is quite possible that the disorder dependence within such a narrow disordered region is too weak to be observed. The disordersuppression relaxation in gold films 18 within a wide disorder range is completely contrary to our results in semiconducting InN films.…”

mentioning

confidence: 99%

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Electron-phonon interaction in disordered semiconductors

Yang

Pan

et al. 2008

Applied Physics Letters

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We have presented a detailed experimental investigation of the effects of disorder on the electron-phonon interaction in semiconducting InN system. Both the temperature ͑T͒ and disorder ͑electron mean free path l͒ dependences of the electron-phonon scattering time e-ph have been determined from the weak localization analysis. It is found that e-ph −1 exhibits a tendency to change gradually from the characteristic dependence e-ph −1 ϰ T 3 l 0 in the pure limit to the form of T 2 l −1 as the films become disordered. Our observation gives clear evidence for the substantial enhancement of the electron-phonon coupling in semiconductor structures due to elastic electron scattering.

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“…The two Sb films listed in Table I were first deposited and studied two years ago in ref. [17]. During the past two years, they were exposed to air all the time.…”

Section: Experimental Methodsmentioning

confidence: 99%

Effect of annealing on electron dephasing in three-dimensional polycrystalline metals

Lin

Zhong

2002

Europhys. Lett.

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We have studied the effect of thermal annealing on electron dephasing times τ φ in three-dimensional polycrystalline metals. Measurements are performed on as-sputtered and annealed AuPd and Sb thick films, using weak-localization method. In all samples, we find that τ φ possesses an extremely weak temperature dependence as T → 0. Our results show that the effect of annealing is non-universal, and it depends strongly on the amount of disorder quenched in the microstructures during deposition. The observed "saturation" behavior of τ φ cannot be easily explained by magnetic scattering. We suggest that the issue of saturation can be better addressed in three-dimensional, rather than lowerdimensional, structures.

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Electron-phonon scattering times in three-dimensional disordered Sb films

Cited by 9 publications

References 13 publications

Coherent A1g and Eg phonons of antimony

Coherent A1g and Eg phonons of antimony

Electron-phonon interaction in disordered semiconductors

Effect of annealing on electron dephasing in three-dimensional polycrystalline metals

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