Electron-phonon interactions in bilayer graphene

Borysenko, K. M.; Mullen, Jeffrey; Li, X.; Semenov, Yu. G.; Zavada, J. M.; Nardelli, Marco Buongiorno

doi:10.1103/physrevb.83.161402

Cited by 51 publications

(50 citation statements)

References 21 publications

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“…64,[83][84][85] It is noted that the intravalley electron-phonon scattering has been reported in the previous literature as mentioned in the introduction.…”

Section: Model and Ksbesmentioning

confidence: 88%

“…[63][64][65] Specifically, the intravalley electron-acoustic (AC) phonon coupling has been calculated by Viljas and Heikkilä 63 with the continuum theory and also by Borysenko et al 64 from first principles. To explore the intravalley electron-optical (OP) phonon coupling, the tight-binding model, density functional theory and first principles approach are employed by Viljas and Heikkilä, 63 Cappelluti et al 65 and Borysenko et al, 64 respectively. However, the intervalley electron-phonon coupling, which has been shown to play an important role in spin relaxation in rippled singlelayer graphene, 50 has not been reported in the previous literature.…”

Section: -65mentioning

confidence: 99%

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Electron spin relaxation in bilayer graphene

Wang

2013

Phys. Rev. B

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Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the parameters obtained by fitting to the numerical calculation according to the latest report by Konschuh et al. [Phys. Rev. B 85, 115423 (2012)] from first principles. In contrast to single-layer graphene, the leading term of the out-of-plane component of the spin-orbit coupling in bilayer graphene shows a Zeeman-like term with opposite effective magnetic fields in the two valleys. This Zeeman-like term opens a spin relaxation channel in the presence of intervalley scattering. It is shown that the intervalley electron-phonon scattering, which has not been reported in the previous literature, strongly suppresses the in-plane spin relaxation time at high temperature whereas the intervalley short-range scattering plays an important role in the in-plane spin relaxation especially at low temperature. A marked nonmonotonic dependence of the in-plane spin relaxation time on temperature with a minimum of several hundred picoseconds is predicted in the absence of the short-range scatterers. This minimum is comparable to the experimental data. Moreover, a peak in the electron density dependence of the in-plane spin relaxation time at low temperature, which is very different from the one in semiconductors, is predicted. We also find a rapid decrease in the in-plane spin relaxation time with increasing initial spin polarization at low temperature, which is opposite to the situation in both semiconductors and single-layer graphene. A strong anisotropy between the out-of-and in-plane spin relaxations at high temperature is also revealed with the out-of-plane spin relaxation time being about two orders of magnitude larger than the in-plane one. Detailed comparisons of the temperature and electron density dependences of the spin relaxation with the existing experiments [Phys. Rev. Lett. 107, 047206 (2011), Phys. Rev. Lett. 107, 047207 (2011) and Nano Lett. 11, 2363] are reported.

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“…64,[83][84][85] It is noted that the intravalley electron-phonon scattering has been reported in the previous literature as mentioned in the introduction.…”

Section: Model and Ksbesmentioning

confidence: 88%

Section: -65mentioning

confidence: 99%

Electron spin relaxation in bilayer graphene

Wang

2013

Phys. Rev. B

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“…11,15 A comparative analysis reveals several qualitative differences in the intrinsic scattering of MLG and BLG. For one, MLG has six phonon branches with two carbon atoms in a unit cell, whereas these numbers double in BLG.…”

Section: Relevant Scattering Mechanismsmentioning

confidence: 99%

“…10 A recent work based on the first-principles calculations has suggested that this discrepancy may start with the intrinsic transport properties, which results from substantial differences in electron-phonon coupling in these two materials. 11 Additionally, it is widely accepted that extrinsic factors such as charged impurities, disorder, and surface polar phonons (SPPs) can significantly alter carrier transport in graphene on a substrate, which is the most commonly used configuration. [12][13][14] Despite extensive research efforts, a comprehensive understanding of electrontransport properties in BLG is still a work in progress.…”

Section: Introductionmentioning

confidence: 99%

Electron transport properties of bilayer graphene

Borysenko

Nardelli

2011

Phys. Rev. B

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Electron transport in bilayer graphene is studied by using a first-principles analysis and the Monte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in bilayer than in monolayer graphene, with significantly reduced mobilities and saturation velocities, the calculation also reveals a dominant influence of extrinsic factors such as the substrate and impurities. Accordingly, the difference between two graphene forms is more muted in realistic settings, although the velocity-field characteristics remain substantially lower in the bilayer. When bilayer graphene is subject to an interlayer bias, the resulting changes in the energy dispersion lead to stronger electron scattering at the bottom of the conduction band. The mobility decreases significantly with the size of the generated band gap, whereas the saturation velocity remains largely unaffected.

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“…For the parameters Ω ν describing the interaction between the layers we use values in agreement with Ref. 63. It should be noted however, that in the literature a range of values (±30%) can be found for this constant 49,64,65 .…”

Section: Computational Detailsmentioning

confidence: 93%

Electron-phonon scattering and in-plane electric conductivity in twisted bilayer graphene

et al. 2016

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We have surveyed the in-plane transport properties of the graphene twist bilayer using (i) a lowenergy effective Hamiltonian for the underlying electronic structure, (ii) an isotropic elastic phonon model, and (iii) the linear Boltzmann equation for elastic electron-phonon scattering. We find that transport in the twist bilayer is profoundly sensitive to the rotation angle of the constituent layers. Similar to the electronic structure of the twist bilayer the transport is qualitatively different in three distinct angle regimes. At large angles (θ > ≈10• ) and at temperatures below an interlayer BlochGrüneisen temperature of ≈ 10 K the conductivity is independent of the twist angle i.e. the layers are fully decoupled. Above this temperature the layers, even though decoupled in the ground state, are re-coupled by electron-phonon scattering and the transport is different both from single layer graphene as well as the Bernal bilayer. In the small angle regime θ < ≈2• the conductivity drops by two orders of magnitude and develops a rich energy dependence, reflecting the complexity of the underlying topological changes (Lifshitz transitions) of the Fermi surface. At intermediate angles the conductivity decreases continuously as the twist angle is reduced, while the energy dependence of the conductivity presents two sharp transitions, that occur at specific angle dependent energies, and that may be related to (i) the well studied van Hove singularity of the twist bilayer and (ii) a Lifshitz transition that occurs when trigonally placed electron pockets decorate the strongly warped Dirac cone. Interestingly, we find that, while the electron-phonon scattering is dominated by layer symmetric flexural phonons in the small angle limit, at large angles, in contrast, it is the layer anti-symmetric flexural mode that is most important. We examine the role of a layer perpendicular electric field finding that it affects the conductivity strongly at low temperatures whereas this effect is washed out by Fermi smearing at room temperatures.

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Electron-phonon interactions in bilayer graphene

Cited by 51 publications

References 21 publications

Electron spin relaxation in bilayer graphene

Electron spin relaxation in bilayer graphene

Electron transport properties of bilayer graphene

Electron-phonon scattering and in-plane electric conductivity in twisted bilayer graphene

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