Electron-Phonon Interaction and Localization of Surface-State Carriers in a Metallic Monolayer

Matsuda, Iwao; Liu, Canhua; Hirahara, Toru; Ueno, Masashi; Tanikawa, Takehiro; Kanagawa, Taizo; Hobara, Rei; Yamazaki, Shiro; Hasegawa, Shuji; Kobayashi, Katsuyoshi

doi:10.1103/physrevlett.99.146805

Cited by 41 publications

(46 citation statements)

References 26 publications

(40 reference statements)

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“…12,13 This surface does not exhibit any change in its band structure through the MIT in conductance as in the present system. The driving force of the MIT was argued in terms of the weak or strong localization caused by the random potentials provided by scatterers and enhanced by the electron standing waves.…”

Section: Resultsmentioning

confidence: 75%

“…For the Si͑557͒␣ ϫ 2-Pb surface, the surface conductivity at RT is measured to be ϳ100 S, which is comparable with those measured for other well-characterized metallic adsorbate layers on Si surfaces. 5,9,12 Supporting further its metallic nature, the conductivity increases upon cooling from 300 K down to 140 K. However, the conductivity starts to decrease abruptly from 140 K. That is, the surface appears to transit into an insulating state at 140 K.…”

Section: Resultsmentioning

confidence: 91%

“…5 These techniques have been successfully utilized to investigate interesting phase transitions and intriguing electronic properties of low-dimensional metals on surfaces. [5][6][7][8][9][10][11][12][13][14][15] As prototype one-dimensional ͑1D͒ metals on solid surfaces, atomic wire arrays on silicon surfaces, such as Si͑111͒4 ϫ 1-In and Si͑553͒-Au, are characterized by wellordered atomic chain structures and strongly anisotropic band structures. 7,16 Their well-nested Fermi surfaces ͑FSs͒ lead to Peierls-type MITs upon cooling with periodic lattice distortions.…”

Section: Introductionmentioning

confidence: 99%

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Conductance transition and interwire ordering of Pb nanowires on Si(557)

Morikawa

Kitaoka

et al. 2010

Phys. Rev. B

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A Pb-nanowire array on a stepped Si surface, Si͑557͒␣ ϫ 2-Pb, is investigated by surface-state conductivity measurements, scanning-tunneling microscopy ͑STM͒, and angle-resolved photoelectron spectroscopy ͑ARPES͒. No clear indication was found for the abrupt phase transition at 78 K, which was reported to exhibit a switching from a two-dimensional semiconducting conductivity to an one-dimensional metallic behavior and to accompany an intrawire ordering together with a change in the interwire periodicity ͑so-called "refacetting"͒. In contrast, a significant reduction in the surface conductivity is found at around 140 K. This transition is accompanied by a subtle out-of-phase interwire ordering of the protrusions along wires in STM images. However, ARPES finds no sign of a significant electronic structure change. While we cannot rule out the possibility of a phase transition at 78 K within a very limited coverage range, this metal-insulator-type transition is found to prevail for most of Pb coverages with a good ␣ ϫ 2 ordering. The conductivity below 80 K can be described by the weak localization in two dimensions probably due to the interwire ordering but the abrupt transition at 140 K itself cannot easily be explained at present.

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Section: Resultsmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

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Conductance transition and interwire ordering of Pb nanowires on Si(557)

Morikawa

Kitaoka

et al. 2010

Phys. Rev. B

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“…This is qualitatively in agreement with the conductivity observed in lateral transport measurements using a four point-probe technique on the micrometer scale. 29 Compared to the ͑7 ϫ 7͒ reconstruction, the resistance is lowered by three orders of magnitude for the Ag ͱ 3 ϫ ͱ 3 at low temperatures ͑100 K͒.…”

Section: Ag Multilayers: the Role Of The Wetting Layermentioning

confidence: 99%

Coulomb blockade effects in Ag/Si(111): The role of the wetting layer

2009

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Single and double barrier structures have been realized with Ag nanostructures grown on Si͑111͒ in combination with scanning tunneling microscopy. The series connection of a Schottky ͑SB͒ and tunneling barrier mimics a double barrier structure showing Coulomb blockade oscillations as revealed by scanning tunneling spectroscopy ͑STS͒. Although the SB remains in presence of a Ag ͱ 3 ϫ ͱ 3 reconstruction, the dI / dV characteristic turns into a single barrier structure. The Ag reconstruction provides a sufficiently high electron mobility capturing intrinsic defects which shortens the resistance of the SB. These results show that vertical transport properties, as measured with STS, are not only controlled by the structure and the bonding on the atomic scale, but depend strongly on the lateral properties of the interface as well.

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“…Furthermore, the conduction band splits into two branches in ultrathin films such as Ag, Au, Pd, etc. [22][23][24]. The separation between the branches expands with the inverse of film thickness.…”

Section: Conductor-insulator Transition: E G Opening and Surface Plasmentioning

confidence: 96%

Functionalities of Non-Bonding Electrons: Size Emergence

Sun

2014

Springer Series in Chemical Physics

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• The coupling of the entrapment and the polarization of the nonbonding lone electrons by the densely entrapped core and bonding electrons derives emerging properties that the bulk counterpart does not show.• imilar to the lone pairs and dipoles, the polarized lone electrons neither follow the dispersion relationships nor occupy the allowed states in the valence band and below but they generate the midgap impurity states near E F .• Polarization happens at sites with even lower atomic CN, which gives rise to the non-zero spin (carrier of topologic insulator), conductor-insulator transition, surface plasmonic enhancement, and the superhydrophobicity, superfluidity, superlubricity, and supersolidity.• The dominance of entrapment derives the acceptor type catalysis and the dominance of polarization results in donor-type catalyst of metals at the nanoscale.• These emerging attributes become more significant when the atomic CN is even lower. UV irradiation, hydrogenation or contamination may annihilate these features. Significance of Non-Bonding ElectronsAlthough they exist ubiquitously in the human bodies and our surroundings, the impact of the non-bonding lone electrons and lone-electron pairs has long been underestimated. In addition to the shorter and stronger bonds between undercoordinated atoms that initiate the size trends of the otherwise constant bulk properties when a substance turns into the nanoscale, the presence of the lone electrons nearby the broken bonds generate the fascinating phenomena that bulk materials do not show. The lone-electron pairs and the lone-pair-induced dipoles associated with C, N, O, and F tetrahedral coordination bonding form functional groups in the biologic, organic, and inorganic specimens. This section will focus on the development and applications of theory regarding the energetics and dynamics of nonbonding electrons, aiming to raise the awareness of their revolutionary impact to C. Q. Sun,

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Electron-Phonon Interaction and Localization of Surface-State Carriers in a Metallic Monolayer

Cited by 41 publications

References 26 publications

Conductance transition and interwire ordering of Pb nanowires on Si(557)

Conductance transition and interwire ordering of Pb nanowires on Si(557)

Coulomb blockade effects in Ag/Si(111): The role of the wetting layer

Functionalities of Non-Bonding Electrons: Size Emergence

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