Electron paramagnetic resonance signature of point defects in neutron-irradiated hexagonal boron nitride

Toledo, José Roberto de; Jesus, De; Kianinia, Mehran; Leal, Alexandre Soares; Fantini, C.; Cury, L. A.; Sáfar, G. A. M.; Aharonovich, Igor; Krambrock, Klaus

doi:10.1103/physrevb.98.155203

Cited by 56 publications

(74 citation statements)

References 29 publications

(46 reference statements)

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“…Especially, the fact that many emitters appear at the edges of h-BN flakes and wrinkles on them 31,32 motivates the investigation on the effect of strain on these emitters. Furthermore, the quantum emitters have shown magnetic properties in some experiments [33][34][35][36] , while in other experiments non-magnetic behavior was found 21 .…”

Section: Introductionmentioning

confidence: 99%

Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN

Song

Chou

et al. 2020

npj Quantum Inf

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We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (h-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab initio analysis we show that strong electron–phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of h-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.

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Section: Introductionmentioning

confidence: 99%

Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN

Song

Chou

et al. 2020

npj Quantum Inf

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“…A second consideration is that zero-field ODMR measurements on their own are not sufficient to deduce the microscopic structure of the defect. To address these points, we applied high-field ODMR and EPR to previously studied exfoliated hBN flakes 27 as well as to the hBN single crystal as studied by ODMR in Figure 1. We also note that the defects in the hBN single crystals were created in the same way as in the hBN-exfoliated flakes (see Methods).…”

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confidence: 99%

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

et al. 2020

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Optically addressable spins in wide-bandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically-thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect-the negatively charged boron vacancy ( )-and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet (S = 1) ground state with a zero-field splitting of ≈3.5 GHz and establish that the centre exhibits optically detected magnetic resonance (ODMR) at room temperature. We also demonstrate the spin polarization of this centre under optical pumping, which leads to optically induced population inversion of the spin ground state-a prerequisite for coherent spin-manipulation schemes. Our results constitute a leap forward in establishing twodimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin-based quantum information and sensing applications, as our ODMR studies on hBN -NV diamonds hybrid structures show.

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“…EPR studies in h-BN date back to the 1970s [90]. One recent demonstration of the EPR signature of point defects in neutronirradiated hexagonal boron nitride is shown in [145] for commercial h-BN powder with size of ≈70 nm. A zero-field splitting D = 1.2 GHz was associated with a broad visible optical absorption band (490 nm) and a near-infrared PL band centered at ≈820 nm.…”

Section: Spin-photon Interfacementioning

confidence: 99%

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

Castelletto

Inam

Sato

et al. 2020

Beilstein J. Nanotechnol.

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Single-photon sources and their optical spin readout are at the core of applications in quantum communication, quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide) with proven single-photon emission from the visible to infrared, a quantum spin–photon interface, and ancilla qubits, it is expected that other material platforms could emerge with similar characteristics in the near future. These two materials also naturally lead to monolithic integrated photonics as both are good photonic materials. While so far the verification of single-photon sources was based on discovery, assignment and then assessment and control of their quantum properties for applications, a better approach could be to identify applications and then search for the material that could address the requirements of the application in terms of quantum properties of the defects. This approach is quite difficult as it is based mostly on the reliability of modeling and predicting of color center properties in various materials, and their experimental verification is challenging. In this paper, we review some recent advances in an emerging material, low-dimensional (2D, 1D, 0D) hexagonal boron nitride (h-BN), which could lead to establishing such a platform. We highlight the recent achievements of the specific material for the expected applications in quantum technologies, indicating complementary outstanding properties compared to the other 3D bulk materials.

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Electron paramagnetic resonance signature of point defects in neutron-irradiated hexagonal boron nitride

Cited by 56 publications

References 29 publications

Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN

Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

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