The results of optical absorption, photoluminescence, electrical conductivity, and Hall-effect measurements on LEC-grown Gap: Ti are reported. The positiom of the Ti$/T& acceptor level at 4, -0.50 eV and the Ti&/T& donor level at E, + 1.0 eV are established and the photoionization transitions from and to these deep levels are identified in the absorption spectra and from recharging processes. The internal transitions 3A, -3T1(F) and + 8T1(P) of T i 3 are found in absorption and the e lT, transitions of Ti$ are seen in the absorption as well as luminescence spectra. The interpretation of these bands and sharp lines requires to take into account different kinds of electron-phonon coupling. Photoinduced recharging experiments at low temperatures on high-resistance GaP:Ti and GaP:Ti: Zn are consistently explained including the three charge states of Ti&, of the P G~P~ antisite defect, and of the residual F~Q~ impurity.Die Ergebnisse von Messungen der optischen Absorption, Photolumineszenz, elektrischen Leitfiihigkeit und des Hall-Effekts an LEC-geziichtetem GaP:Ti werden mitgeteilt. Die Lagen des Ti$/Tig Akzeptorniveaus bei Ec -0.50 eV und des T a / T i % Donatorniveaus bei E , + 1.0 eV werden gesichert und die Photoionisationsiibergange von und zu diesen tiefen Niveaus werden in den Absorptionsspektren und aus Umladungsprozessen identifiziert. Die inneren ubergiinge 3A, + sT1(F) und 4 3T1(P) des Ti ; : werden in Absorption gefunden und die *E cf lT, Ubergiinge