Electron paramagnetic resonance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Cu</mml:mi><mml:mrow><mml:msup><mml:mrow><mml:mo>(</mml:mo><mml:mi>d</mml:mi></mml:mrow><mml:mrow><mml:mn>9</mml:mn></mml:mrow></mml:msup></mml:mrow><mml:mo>)</mml:mo></mml:math>in GaN

Bozdog, Cornel; Chow, K. H.; Watkins, G. D.; Sunakawa, Hajime; Kuroda, Naotaka; Usui, Akira

doi:10.1103/physrevb.62.12923

Cited by 24 publications

(15 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…43 The model also agrees with first-principles calculations 44 for Cu in CdTe and the qualitative observation that Cu introduces a mid-gap level in GaN. 45 Note that the universal (0/-) level does not depend on the oxidation state. For example, a neutral substitutional Cu acceptor is denoted Cu 4+ in Si, Cu 3+ in GaAs, and Cu 2+ in ZnO.…”

supporting

confidence: 70%

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

et al. 2014

View full text Add to dashboard Cite

supporting

confidence: 70%

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

et al. 2014

View full text Add to dashboard Cite

“…According to the literature, from EPR investigations of Cu doped GaN it was found that Cu is observed in GaN as a deep acceptor state [16]. Hence, the activation probability of holes (inherent to the deep Cu-induced acceptor states) at room temperature results in a low electrical conductivity or semi-insulating behavior.…”

Section: Resultsmentioning

confidence: 99%

Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN

et al. 2005

View full text Add to dashboard Cite

SOptical and structural properties of in situ Cu doped GaN thin films grown on sapphire substrates were optically investigated by means of Raman, photoluminescence (PL), and absorption spectroscopy. Different Cu concentrations in the films were analyzed by secondary ion mass spectroscopy (SIMS) and found to vary from 2x10 16 cm -3 to 5x10 17 cm -3 . Raman studies confirmed high crystalline quality of GaN:Cu with no major structural damages due to Cu incorporation. PL investigation revealed that the origin of the emission around 2.4 eV is most likely due to Cu incorporation. The electrical conductivity of the samples was analyzed by Hall measurements and the found semi-insulating behavior was assigned to the compensation of intrinsic donors by the deep Cu acceptor states.

show abstract

“…the one-SO-parameter model). Recently, Wu et al [10,11] studied these SH parameters using the first-order perturbation formulae within the 2 T 2 term, based on a two-SO-parameter model derived by them, in which, not only the contribution due to the SO parameter of central d 9 ion (as in [8,9]), but also that of ligand ion, via a covalence effect, are included. However, there are some weaknesses in these formulae.…”

Section: Introductionmentioning

confidence: 99%

“…, 65 A == , 65 A ? ) were reported [7,8]. For d 9 ions in trigonal tetrahedra, because the ground state is 2 T 2 in cubic tetrahedra, the theoretical calculations of SH parameters in previous studies [8,9] were made using the first-order perturbation formulae within the 2 T 2 term.…”

Section: Introductionmentioning

confidence: 99%

“…were reported [7,8]. For d 9 ions in trigonal tetrahedra, because the ground state is 2 T 2 in cubic tetrahedra, the theoretical calculations of SH parameters in previous studies [8,9] were made using the first-order perturbation formulae within the 2 T 2 term. By means of the equivalence between the SH and the Zeeman or hyperfine interaction, these perturbation formulae can be obtained from the diagonalization of the energy matrix within the 2 T 2 term.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Theoretical calculations of spin-Hamiltonian parameters and defect structures for Cu²⁺in trigonally-distorted tetrahedral sites of ZnO and GaN crystals

Zheng

Yang

2009

Philosophical Magazine

View full text Add to dashboard Cite

The spin-Hamiltonian (SH) parameters (g factors g == , g ? and hyperfine structure constants 63 A == , 63 A ? , 65 A == , 65 A ? ) for Cu 2þ ions in the trigonally-distorted tetrahedral sites of ZnO and GaN crystals are calculated from a complete diagonalization (of energy matrix) method (CDM) based on a two spin-orbit parameter model for d 9 ions in trigonal symmetry. In the method, the Zeeman and hyperfine interaction terms are added to the Hamiltonian in the conventional CDM. The calculated results are in good agreement with the experimental values. The calculated SH parameters are also compared with those using the traditional diagonalization method or perturbation method only within the 2 T 2 term. It appears that, for exact calculations of SH parameters of d 9 ions in trigonal tetrahedral clusters in crystals, the present CDM is preferable to the traditional diagonalization method or perturbation method within the 2 T 2 term. The local structures of Cu 2þ centers (which differ from the corresponding structure in the host crystal) in ZnO : Cu 2þ and GaN : Cu 2þ are obtained from the calculations. The results are discussed.

show abstract

Electron paramagnetic resonance ofCu(d9)in GaN

Cited by 24 publications

References 11 publications

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN

Theoretical calculations of spin-Hamiltonian parameters and defect structures for Cu²⁺in trigonally-distorted tetrahedral sites of ZnO and GaN crystals

Contact Info

Product

Resources

About

Electron paramagnetic resonance ofCu(d9)in GaN

Cited by 24 publications

References 11 publications

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN

Theoretical calculations of spin-Hamiltonian parameters and defect structures for Cu2+in trigonally-distorted tetrahedral sites of ZnO and GaN crystals

Contact Info

Product

Resources

About

Theoretical calculations of spin-Hamiltonian parameters and defect structures for Cu²⁺in trigonally-distorted tetrahedral sites of ZnO and GaN crystals