Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon

Gehlhoff, W.; Emanuelsson, P.; Omling, P.; Grimmeiss, H. G.

doi:10.1103/physrevb.41.8560

Cited by 27 publications

(8 citation statements)

References 7 publications

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“…The ESR line frequency ( f L ) obtained from the curve fit is not unreasonable as Kramer's doublets have been observed in silicon due to the ZFS of FeAl paramagnetic pairs [19]. The ZFS in that case was determined to be large compared with the microwave energy applied at 9.525 GHz.…”

Section: Van Vleck Paramagnetismmentioning

confidence: 78%

Characterization of a spherically symmetric fused-silica-loaded cavity microwave resonator

Anstie¹,

Hartnett²,

Tobar³

et al. 2003

Meas. Sci. Technol.

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Whispering spherical modes in a fused-silica-loaded cavity with spherical symmetry are characterized and reported. The fundamental mode families of the transverse electric and transverse magnetic whispering gallery modes are measured and the loss tangent of the fused silica determined as a function of frequency in the 3-12 GHz regime. The temperature dependences of mode frequency and quality factor were determined between 6 and 300 K. The relative permittivity and loss tangent for fused silica at 5.18 GHz were determined between 6 and 300 K. Below 22 K the frequency dependence of the 5.18 GHz TM 212 mode of resonance was consistent with the combined effects of the thermal properties of the dielectric and the temperature dependence of an unknown paramagnetic impurity ion, which has a spin resonance frequency at about 138 ± 31 GHz. Below 8 K the loss tangent exhibited a ninth-order power-law temperature dependence, which may be explained in terms of Raman scattering of phonons from the paramagnetic impurity ions.

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Section: Van Vleck Paramagnetismmentioning

confidence: 78%

Characterization of a spherically symmetric fused-silica-loaded cavity microwave resonator

Anstie¹,

Hartnett²,

Tobar³

et al. 2003

Meas. Sci. Technol.

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“…Donor levels of the trigonal centers Fe i Al, Fe i Ga, and Fe i In, and the acceptor levels of Fe i Al and Fe i In have also been detected or suggested. 2 Besides, an orthorhombic-I metastable structure has been observed for Fe i Al, 19,20 Fe i Ga, 21 and Fe i In, 21,22 and tentatively identified for Fe i B. 23 Experimental evidence of the metastability of the Fe i Al pair dates back to the DLTS work of Chantre and Bois in 1985.…”

Section: Introductionmentioning

confidence: 96%

First-principles study of Fe and FeAl defects in SiGe alloys

et al. 2008

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First-principles, spin-polarized local-density-functional calculations are used to model interstitial iron ͑Fe i ͒ and its complexes with substitutional aluminum in dilute Si x Ge 1−x alloys ͑x Ͻ 8%͒. We considered both the effect of direct bonding between Fe i or Fe i Al with Ge atoms in the x → 0 limit and the evolution of the defect properties with the alloy composition. It is found that Fe i prefers Si-rich regions, but when placed near a Ge atom, its ͑0 / +͒ level is shifted toward the conduction band. However, the ionization energy of Fe ͑+/+2͒ -Al − is only slightly changed by the presence of neighboring Ge atoms in the proximity. It is also found that indirect alloying effects shift the donor levels of Fe i and FeAl at a fast rate toward the valence band. The acceptor levels, however, remain approximately at the same distance from E v .

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“…1) The defect structures of transitionmetal pairs and transition-metal-acceptor pairs in Si have been studied extensively. [1][2][3][4][5][6] It is probable that such pairs containing two impurities on a substitutional site and an interstitial site have two configurations: one consists of atoms on a substitutional site and the nearest-neighbor interstitial site, and the other consists of atoms on a substitutional site and the next-nearest-neighbor interstitial site. The nearest-neighbor configuration and next-nearest-neighbor configuration have trigonal symmetry and orthorhombic symmetry, respectively.…”

Section: Introductionmentioning

confidence: 99%

Palladium–Hydrogen Complex in Silicon Observed by Electron Spin Resonance Measurement

Ishiyama

Kimura

Mori

et al. 2011

Jpn. J. Appl. Phys.

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We have investigated a palladium–hydrogen complex in silicon by electron spin resonance (ESR) measurement. A new ESR spectrum was detected in a sample diffused with palladium and hydrogen. The hyperfine structure of hydrogen atoms in the ESR spectrum shows that the spectrum originates from a palladium–hydrogen complex containing three hydrogen atoms (Pd–H3). The anisotropic g-value of Pd–H3 shows that the Pd–H3 complex has an anisotropic character of orthorhombic (C 2v ) symmetry. The calculated g-values of the Pd–H3 complex are g 1 = 2.12, g 2 = 2.10, and g 3 = 2.03, and the g 2 axis is along the <100 > direction. The anisotropic character of orthorhombic (C 2v ) symmetry results from a configuration consisting of one Pd atom at a substitutional site, two equivalent hydrogen atoms at interstitial sites along the <111 > direction, and one hydrogen atom at the next-nearest-neighbor interstitial site along the <100 >-twofold symmetry axis. We have also studied the dissociation of a platinum–hydrogen complex by thermal treatment. The activation energy for the dissociation of the Pd–H3 complex is estimated to be about 1.6 eV.

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Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon

Cited by 27 publications

References 7 publications

Characterization of a spherically symmetric fused-silica-loaded cavity microwave resonator

Characterization of a spherically symmetric fused-silica-loaded cavity microwave resonator

First-principles study of Fe and FeAl defects in SiGe alloys

Palladium–Hydrogen Complex in Silicon Observed by Electron Spin Resonance Measurement

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