Electron optical image correction subsystem in electron beam projection lithography

Kojima, Shinichi; Stickel, W.; Rockrohr, James Donald; Gordon, Michael S.

doi:10.1116/1.1324641

Cited by 13 publications

(6 citation statements)

References 3 publications

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“…The space charge effect correction parameters were calculated based on the deflector position by Nikon's plug-in software 11 before EPL exposure, and rendering the same compromised focal planes for each SF. The space charge effect correction was applied by refocusing at each SF because the compromised focal plane changed with each beam current.…”

Section: A Beam Blur Dependence On Beam Currentmentioning

confidence: 99%

Direct measurements and analyses of the Coulomb effects in electron projection lithography

Yamamoto¹,

Yamashita²,

Arimoto³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High-performance proximity effect correction for sub-70 nm design rule system on chip devices in 100 kV electron projection lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.The Coulomb effects have been common problems in electron-beam lithography. In our previous article, we studied the influence of the Coulomb effects on electron projection lithography ͑EPL͒ process. In this paper, we analyze the Coulomb effects by direct blur measurements and by simulations. We found that there existed a beam blur around 32 nm at a low beam current ͑approximately 0 A͒. We found a relationship between the beam blur and the beam current that was 5.4 nm/ A, and this number agreed with our simulation work as well as with our experiment with resist resolution. We learned that at low current the blur was so small that a blur distribution could be practically ignored. An important finding we had, is that the beam blur did not only depend on the beam current but also on the pattern arrangement. We found the possibility of the existence of the local Coulomb effects and estimated its range to be around 100-120 m on our system. These phenomena should be taken into considerations when making proximity effect correction for highly accurate critical dimension control.

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Section: A Beam Blur Dependence On Beam Currentmentioning

confidence: 99%

Direct measurements and analyses of the Coulomb effects in electron projection lithography

Yamamoto¹,

Yamashita²,

Arimoto³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

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“…SCE correction parameters are calculated based on the deflector position by Nikon's plug-in software 9 before EPL exposure, rendering the same compromised focal planes for each SF. If the beam current on the wafer increased, the compromised focal plane shifted away from the electron source by SCE and the beam image profile blurred.…”

Section: A Wafer Exposure and The Resist Processmentioning

confidence: 99%

Influence of Coulomb effects on electron projection lithography process

Yamamoto¹,

Yamashita²,

Yamabe³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inInfluence of proximity effects in electron-beam lithography on the optical properties of planar photonic-crystal waveguides J. Appl. Phys. 102, 083110 (2007); 10.1063/1.2801023 Direct measurements and analyses of the Coulomb effects in electron projection lithographya) J. Vac. Sci. Technol. B 23, 3182 (2005); 10.1116/1.2131085 Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process J. Vac. Sci. Technol. B 22, 136 (2004); 10.1116/1.1635850High-performance proximity effect correction for sub-70 nm design rule system on chip devices in 100 kV electron projection lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.

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“…13) There are two groups of dynamic correction sources, pre-determined corrections and real-time corrections.…”

Section: Dynamic Correctionsmentioning

confidence: 99%

Nikon EB stepper: its system design and preliminary performance

et al. 2003

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Electron Projection Lithography (EPL) has a high potential for applicability beyond the ITRS 65 nm node, especially for contacts and gate layers. The concept of synchronization control of the Nikon EB stepper is explained. The reticle stage and the wafer stage are servo controlled to target positions individually. The residual stage position errors are compensated by the electron beam deflection control. The electron beam deflection is feed forward controlled using predicted stage position data from a subsystem called "Filter/Predictor". The performance of the stage position prediction of the Filter/Predictor is described. This paper also reports the performance of the first EB stepper tool, the NSR-EB1A, during its preliminary adjustment phase. Dynamic scanning and stitching exposure, which requires synchronization of both the beam deflection motion and the stage scanning motion, was realized. Dynamic resolution of 100 nm and dynamic subfield stitching accuracy of 25 nm (3σ) were obtained, and further improvement is expected.

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Electron optical image correction subsystem in electron beam projection lithography

Abstract: Articles you may be interested inPerformances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field

Cited by 13 publications

References 3 publications

Direct measurements and analyses of the Coulomb effects in electron projection lithography

Direct measurements and analyses of the Coulomb effects in electron projection lithography

Influence of Coulomb effects on electron projection lithography process

Nikon EB stepper: its system design and preliminary performance

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