Electron Mobility Studies in Surface Space-Charge Layers in Vapor-Deposited CdS Films

Waxman, A.; Henrich, Victor E.; Shallcross, F. V.; Borkan, H.; Weimer, P.K.

doi:10.1063/1.1713867

Cited by 116 publications

(15 citation statements)

References 14 publications

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“…This result is similar to that observed by Waxman (Fig. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] for the CdS films [32]. For the silicon case, however, the mobility decreases rapidly as the depletion region widens, again indicating a mobility gradient through the film, consistent with the Anderson model (Fig.…”

Section: Above This 6vsupporting

confidence: 87%

“…Experimental verifications of the models discussed in the previous section, especially the predicted reduced mobility and its exponential dependence upon inverse temperature, have appeared throughout the literature. Compound semiconductors reported to follow these models include: CdS [29,32,61,[103][104][105][106][107][108][109][110][111][112][113][114][115]; CdSe [64,115,116]; CdTe [118][119][120][121]; PbS [38,122]; PbSe [38,47,52,122,125]; PbTe [38,55,[126][127][128]; InAs [129]; InP [92,[130][131][132][133]; InSb [134][135][136]; CuxS [137][138][139]...…”

Section: B the Resultsmentioning

confidence: 99%

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Electrical Properties of Polycrystalline Semiconductor Thin Films

Kazmerski¹

1980

Polycrystalline and Amorphous Thin Films and Devices

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Section: Above This 6vsupporting

confidence: 87%

Section: B the Resultsmentioning

confidence: 99%

Electrical Properties of Polycrystalline Semiconductor Thin Films

Kazmerski¹

1980

Polycrystalline and Amorphous Thin Films and Devices

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“…The strong emission peak was located at 505 nm with intensity linear to excitation power (Figure c, blue), which is ascribed to free exciton (FX) emission . As a contrast, the weaker emission peak (BX) saturates at strong excitation (Figure c, pink), which is possibly due to (1) ionized vacancies or (2) transitions of electrons trapped at surface states to the VB of CdS . In our scenario, the BX emission peak intensity is highly dependent on the excitation wavelength as shown in Figure a.…”

mentioning

confidence: 65%

Surface State Mediated Interlayer Excitons in a 2D Nonlayered–Layered Semiconductor Heterojunction

Zhao

Wang

Zhang

et al. 2017

Adv Elect Materials

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to strong quantum confinement effect, electrons and holes are tightly bonded together in the TMDs, which is extensively harmful for generation and separation of free carriers. [12,13] Recently, thin-layered TMDs can be vertically stacked to create a van der Waals (vdW) heterojunction with type-II band alignment, providing spatial segregation of photogenerated electrons and holes to different layers. [14][15][16][17][18][19][20][21][22][23][24] For instance, n-type MoX 2 monolayer, where the X is sulfur (S) or selenium (Se), can be vertically stacked on p-type WX 2 monolayer to create vertical type-II p-n junction, and then drives vertical separation of holes and electrons. [18][19][20][21] Furthermore, interlayer excitons are generated in type-II vdW heterojunction, which are promising for applications in optoelectronic devices, photovoltaic applications and spin-valleytronic device, etc. [16][17][18][19][20] So far, most of TMD's vertical heterojunctions have been limited to the crystalline structure of the layered materials. [25] Many nonlayered materials based on group IV, III-V, or II-VI semiconductors also exhibit attractive photocatalytic, solar cells and optical detectors properties, etc. [25][26][27][28][29][30][31] Combination of such nonlayered functional semiconductors (e.g., CdS or PbS) with layered TMDs Van der Waals heterojunctions of 2D layered semiconductors and nonlayered technological important II-V semiconductors provide unprecedented opportunities to engineer exciton and carrier dynamics in 2D optoelectronic devices. However, fabrication of such artificial heterojunctions with type-II band alignment structure and realization of interlayer excitons is challenging. Here, CdS-MoS 2 type-II heterojunctions vertically stacked with few layered MoS 2 and ultrathin CdS film are reported. Steady-state spectroscopy and time-resolved photoluminescence spectroscopy are used to study exciton and carrier dynamics in these heterojunctions. The surface states of the ultrathin CdS film caused by dangling bonds mediate interlayer exciton emission located at 753 nm in a CdS-bilayer MoS 2 heterojunction via charge transition between the MoS 2 indirect band and the CdS valence band. As a contrast, the surface states of CdS impede the recombination of interlayer excitons in a CdS-monolayer MoS 2 heterojunction. These results are helpful for development of high-performance ultrathin optoelectronic and energy devices including light emission diodes, solar cells, and photodetectors. 2D Semiconductors2D transition metal dichalcogenides (TMDs) semiconductors hold great potentials in ultrathin optoelectronic devices, including light-emitting diodes, transistors, and detectors, etc. [1][2][3][4][5][6][7][8][9][10][11] Performance of these optoelectronics devices is highly determined by free carrier dynamics of TMDs from genera-

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“…As these trap states fill, a higher percentage of the injected channel electrons are free to drift, to the drain electrode, thereby resulting in an increase in inc . 29 The inc -V GS curve shown in Fig. 5͑a͒ decreases at larger V GS values as a consequence of either an electron in -FIG.…”

Section: Mobility Assessmentmentioning

confidence: 95%

Transparent thin-film transistors with zinc indium oxide channel layer

Dehuff

Kettenring

Hong

et al. 2005

Journal of Applied Physics

400

240

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High mobility, n-type transparent thin-film transistors ͑TTFTs͒ with a zinc indium oxide ͑ZIO͒ channel layer are reported. Such devices are highly transparent with ϳ85% optical transmission in the visible portion of the electromagnetic spectrum. ZIO TTFTs annealed at 600°C operate in depletion-mode with threshold voltages −20 to −10 V and turn-on voltages ϳ3 V less than the threshold voltage. These devices have excellent drain current saturation, peak incremental channel mobilities of 45-55 cm 2 V −1 s −1 , drain current onto off ratios of ϳ10 6 , and inverse subthreshold slopes of ϳ0.8 V / decade. In contrast, ZIO TTFTs annealed at 300°C typically operate in enhancement-mode with threshold voltages of 0-10 V and turn-on voltages 1-2 V less than the threshold voltage. These 300°C devices exhibit excellent drain-current saturation, peak incremental channel mobilities of 10-30 cm 2 V −1 s −1 , drain current onto off ratios of ϳ10 6 , and inverse subthreshold slopes of ϳ0.3 V / decade. ZIO TTFTs with the channel layer deposited near room temperature are also demonstrated. X-ray diffraction analysis indicates the channel layers of ZIO TTFTs to be amorphous for annealing temperatures up to 500°C and polycrystalline at 600°C. Low temperature processed ZIO is an example of a class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with ͑n −1͒d 10 ns 0 ͑n ജ 4͒ electronic configurations.

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Electron Mobility Studies in Surface Space-Charge Layers in Vapor-Deposited CdS Films

Cited by 116 publications

References 14 publications

Electrical Properties of Polycrystalline Semiconductor Thin Films

Electrical Properties of Polycrystalline Semiconductor Thin Films

Surface State Mediated Interlayer Excitons in a 2D Nonlayered–Layered Semiconductor Heterojunction

Transparent thin-film transistors with zinc indium oxide channel layer

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