Electron Mobility in Direct-Gap Polar Semiconductors

Rode, D. L.

doi:10.1103/physrevb.2.1012

Cited by 360 publications

(156 citation statements)

References 34 publications

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“…1 cluded through the usual Brooks-Herring formalism, and the Boltzmann transport equation was solved by Rode's iterative method. [17][18][19] The result was N D Ӎ 6 ϫ 10 18 and…”

Section: Electrical and Optical Measurementsmentioning

confidence: 99%

“…2 we present vs T data for sample 5169, discussed above, as well as the other samples mentioned in Table I. Sample 5176, which was grown in a N flux about 3ϫ that of 5169, exhibited a Hall concentration of about 1ϫ10 17 cm Ϫ3 , nearly constant with T, and a very low mobility, increasing from 0.7 to 4 cm 2 /V s, as T increased from 77 to 400 K. Theoretical fitting of these data, assuming transport in the conduction band, gives N D Ӎ N A Ӎ 1.4 ϫ 10 20 cm Ϫ3 so that N I Ӎ 2.8 ϫ 10 20 cm Ϫ3 , although it is doubtful that the Brooks-Herring theory would be accurate at such concentrations, 20 and the assumption of single scattering events would likewise be questionable. 21 However, there is another argument casting doubt on the possibility of such high values of N D and N A .…”

Section: Electrical and Optical Measurementsmentioning

confidence: 99%

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Deep-center hopping conduction in GaN

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Reynolds

Kim

et al. 1996

Journal of Applied Physics

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Molecular-beam-epitaxial GaN layers change from strongly conductive ͑ Ӎ 10 Ϫ2 ⍀ cm at 300 K͒ to semi-insulating ͑ Ӎ 10 6 ⍀ cm͒ as the N flux is increased. Layers grown at low fluxes show strong n-type conduction, with transport in the conduction band at high temperatures and in a shallow donor band at low temperatures. For layers grown at high N fluxes, the Hall coefficients become too small to measure, suggesting hopping conduction among deep centers. The temperature-dependent resistivity data are most consistent with multiphonon, rather than single-phonon, hopping.

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“…1 cluded through the usual Brooks-Herring formalism, and the Boltzmann transport equation was solved by Rode's iterative method. [17][18][19] The result was N D Ӎ 6 ϫ 10 18 and…”

Section: Electrical and Optical Measurementsmentioning

confidence: 99%

Section: Electrical and Optical Measurementsmentioning

confidence: 99%

Deep-center hopping conduction in GaN

Look

Reynolds

Kim

et al. 1996

Journal of Applied Physics

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show abstract

“…25 The latter rates γ eh and γ ph are increased with carrier concentration 25,26 and electron temperature. 27 Considering only the electronic heat capacity of a free electron gas, the applied fluence can easily account for an electron temperature of several thousand Kelvin. However, this temperature is certainly reduced at the time of measurement (0.8 ps) due to Nano Letters rapid thermalization as discussed below.…”

mentioning

confidence: 99%

Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy

et al. 2014

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ABSTRACT:We report on time-resolved mid-infrared (mid-IR) nearfield spectroscopy of the narrow bandgap semiconductor InAs. The dominant effect we observed pertains to the dynamics of photoexcited carriers and associated surface plasmons. A novel combination of pump− probe techniques and near-field nanospectroscopy accesses high momentum plasmons and demonstrates efficient, subpicosecond photomodulation of the surface plasmon dispersion with subsequent tens of picoseconds decay under ambient conditions. The photoinduced change of the probe intensity due to plasmons in InAs is found to exceed that of other mid-IR or near-IR media by 1−2 orders of magnitude. Remarkably, the required control pulse fluence is as low as 60 μJ/cm 2 , much smaller than fluences of ∼1−10 mJ/cm 2 previously utilized in ultrafast control of near-IR plasmonics. These low excitation densities are easily attained with a standard 1.56 μm fiber laser. Thus, InAsa common semiconductor with favorable plasmonic properties such as a low effective masshas the potential to become an important building block of optically controlled plasmonic devices operating at infrared frequencies.

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“…Let N imp be the number of ionized impurities and s be the inverse screening length. 2 = si 2 + sj 2 ; where sn 2 for each individual band "n" is calculated using Eq. ͑3͒ of Ref.…”

Section: Explicit Expressions For the Scattering Ratesmentioning

confidence: 99%

“…The theory of thermoelectric transport in n-type III-V compound semiconductors is well understood, including the effects of inelastic scattering, [1][2][3] primarily due to the simplicity afforded by the fact that the conduction band-structure in these materials is often described to a very good approximation by the single spherical nonparabolic model. 4 However the treatment of transport in p-type materials is complicated mainly by following two factors: ͑a͒ the warping of constantenergy surfaces of the valence bands, especially the heavyhole band, and ͑b͒ the interaction of the heavy-hole and light-hole bands ͑especially interactions mediated by opticalmode phonons͒, with the energy distribution of carriers in one influenced by that in the other.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric transport in the coupled valence-band model

Ramu¹,

Cassels²,

Hackman³

et al. 2011

Journal of Applied Physics

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The Boltzmann transport equation ͑BTE͒ is applied to the problem of thermoelectric transport in p-type semiconductors whose valence band-structure is describable in terms of two bands degenerate at the ⌫ point. The Seebeck coefficient and mobility are calculated from the solution to two coupled BTEs, one for each band, with interband scattering and scattering by inelastic mechanisms treated exactly by the application of an algorithm developed by the authors in an earlier work. Most treatments of this problem decouple the two bands by neglecting certain terms in the BTE, greatly simplifying the mathematics: the error in the Seebeck coefficient and mobility introduced by this approximation is quantified by comparing with the exact solution. Degenerate statistics has been assumed throughout, and the resulting formalism is therefore valid at high hole concentrations. Material parameters are used that have been deduced from optical, strain and other experiments often not directly related to hole transport. The formulations in this work thus do not use adjustable or fitting parameters. The transport coefficients of heavily doped gallium antimonide, a typical high-efficiency p-type thermoelectric material, are calculated and agreement to experimentally determined values is found to be satisfactory.

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Electron Mobility in Direct-Gap Polar Semiconductors

Cited by 360 publications

References 34 publications

Deep-center hopping conduction in GaN

Deep-center hopping conduction in GaN

Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy

Thermoelectric transport in the coupled valence-band model

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