Electron Mobility Degradation Due to Remote Coulomb Scattering in Ge MOSFET

Abstract

Abstract-Remote13 cm -2 . The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to electric dipole at Al 2 O 3 /GeO x interface. And this remote dipole scattering is found to play a significant role on mobility degradation. The discovery of this new scattering mechanism indicates that engineering of Al 2 O 3 /GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering the Ge mobility enhancement.