Electron microscopy and diffraction studies of pulsed laser deposited cuprous oxide thin films grown at low substrate temperatures

Bangladesh J. Sci. Ind. Res.

Tanvir

Bashar

et al. 2018

Oriented zine oxide (ZnO) seed layers were deposited by simple drop casting of zinc acetate dihydrate (ZAD) solution on glass substrates at room temperature followed by a post-heat treatment at 250 oC. X-ray diffraction (XRD) analyses revealed that ZAD solutions with concentration 0.0025 – 0.0100 M produced amorphous type thin films, whereas 0.0200 M ZAD solutions produced ZnO seed layers with a preferential c-axis texturing.The Scanning Electron Microscopy (SEM) analyses evident that the morphology of ZnO seed layer surface is compact and coherently carpets the underlying glass substrate. ZnO nanorods were then grown by hydrothermal method atop the ZnO seeded and non-seeded substrates. The presence of ZnO seeding layers was found to be beneficial for growing ZnO NRs films vertically. The optical bandgap of ZnO seed and ZnO NR were estimated to be in the range of 3.40 – 3.95 eV and 3.20 – 3.25 eV respectively by using UV-VIS-NIR diffuse reflection spectroscopy. The room temperature photoluminescence analyses revealed that nanostructured ZnO films exhibit a sharp near-band-edge luminescence peak at ~380 nm consistent with the estimated optical band gap and the ZnO nanorod arrays are notably free from defect-related green-yellow emission peaks.Bangladesh J. Sci. Ind. Res.53(4), 233-244, 2018

Section: Zno Seeds On Slg Substratesmentioning

confidence: 99%

Facile synthesis of oriented zinc oxide seed layer for the hydrothermal growth of zinc oxide nanorods

Bangladesh J. Sci. Ind. Res.

Tanvir

Bashar

et al. 2018

“…2 a and 2 b. For Cu x O y phase, a defect structure of Cu 2 O [2] , lattice parameters calculated using both (111) (denoted by ▲) and (200) (denoted by ▼) orientation found to be higher than the bulk (see Fig. 2 b) and the estimated various strains were found to be ∼1% or more for films deposited at 100 °C ≤ T sub ≤ 300 °C.…”

Section: Data Descriptionmentioning

confidence: 91%

“…Thin films deposited using oxygen rich conditions (i.e., O 2pp ≈ 10 mTorr) show a mixture of CuO and Cu 2 O phase but no evidence of Cu 4 O 3 phase is obtained. In contrast, thin films deposited using oxygen poor conditions (i.e., O 2pp ≈ 3 mTorr) at T sub ≈25 °C, exhibit strong Cu 2 O only with (111) and (200) but those grown at 100 °C ≤ T sub ≤ 300 °C contains Cu 2 O phase along with Cu x O y [2] . No standard samples are used for quantification, rather the relative amounts of phase fraction were estimated using ‘Inorganic Crystal Structures Database (ICSD)’ patterns as the basis for phase identification.…”

Section: Data Descriptionmentioning

confidence: 94%

See 1 more Smart Citation

The effect of substrate temperature and oxygen partial pressure on the properties of nanocrystalline copper oxide thin films grown by pulsed laser deposition

2021

Data in Brief

Self Cite

The data presented in this paper are related to the research article entitled “Pulsed laser deposition of single phase n- and p-type Cu 2 O thin films with low resistivity” (S.F.U. Farhad et al., 2020) [1] . The detailed processing conditions of copper oxide thin films and a variety of characterization techniques used are described in the same ref. [1] https://doi.org/10.1016/j.matdes.2020.108848 . Thin films need to grow on different substrates to elucidate various properties of the individual layer for attaining optimum processing conditions required for devising efficient optoelectronic junctions as well as thin film stacks for different sensing applications. This article describes the effect of substrate temperature and oxygen partial pressure on the structural, morphological, optical, and electrical properties of pulsed laser deposited (PLD) nanocrystalline copper oxide thin films on quartz glass, ITO, NaCl(100), Si(100), ZnO coated FTO substrates. The low temperature grown copper oxide and zinc oxide thin films by PLD were used for devising solid n-ZnO/p-Cu 2 O junction and investigated their photovoltaic and interface properties using dynamic photo-transient current measurement at zero bias voltage and TEM/EDX respectively. These datasets are made publicly available for enabling extended analyses and as a guide for further research.

“…Cuprous oxide (Cu2O) is one of the most desirable p-type semiconducting metal oxides used as absorber materials for ZnO based all-oxide solar cell [1][2][3] because of its reported direct bandgap (~2.17 eV), a suitable band alignment with n-type ZnO electrodes, and its environmental benign nature 1,4 . One of the two major difficulties to realize ZnO/Cu2O based optoelectronic devices are: (1) single phase Cu2O at low processing temperature to avoid formation of interfacial defects at the ZnO/Cu2O junction; (2) desired crystallite orientation of cubic Cu2O phase for achieving heteroepitaxy with hexagonal closed packed ZnO wurtzite structure 1,[4][5] . To this end, Akimoto et al 1 demonstrated that solar cells involving growth sequence of ZnO/Cu2O exhibited better performance compared to those involving the Cu2O/ZnO growth sequence and attributed the improved cell performance to the interface with low defects due to the fact of similar atomic structure in ZnO(0001)/Cu2O(111) stacks.…”

Section: Introductionmentioning

confidence: 99%

Texture and Bandgap Tuning of Phase Pure Cu₂o Thin Films Grown By a Simple Potentiostatic Electrodeposition Technique

Hossain²,

Tanvir

et al. 2020

Meet. Abstr.

Self Cite

Highly textured phase pure Cu2O thin films have been grown by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). The surface morphology characterized by Scanning Electron Microscopy (SEM) revealed that the deposited thin films coherently carpet the underlying substrate and composed of sharp faceted well-define grains of 0.5 -1.0 µm sizes. XRD analyses showed that all films are composed of polycrystalline cubic Cu2O phase only and have average crystalline domain size in the range 30 -73 nm. The preferred crystalline orientation of phase pure Cu2O films were found to be changing from ( 200) to (111) with increasing cathodic voltages and showed highest ( 111) and ( 200) crystalline texture coefficient while grown at -1.0 and -0.8 V respectively. Optical bandgap of the as-grown samples were calculated in the range (1.95 -2.20) eV using UV-Vis Transmission data. The performance of copper oxide films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.