Electron mean free paths in ge in the range 70–1400 eV

Szajman, Jakub; Jenkin, J.G.; Liesegang, J.; Leckey, Robert

doi:10.1016/0368-2048(78)85053-1

Cited by 35 publications

(10 citation statements)

References 23 publications

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“…2c) due to coverage of the surface by P and C. From the attenuation of the signal intensity of the TBP annealed sample, we roughly estimated the thickness of the coverage by applying a simple two-layer model. If we assume that the upper layer absorbs intensity according to the Beer-Lambert law and an electron mean free path of 9 A is considered in that energy range [22,23], we can determine a layer thickness of about 3.3 A containing P and C. In addition to this, from the intensity ratio P 2p/Ge 3p we estimated a coverage of the TBP annealed Ge surface of about 2.1 Á equivalent to 1.5 monolayers (ML) of P using the same model and assumptions as above and an electron mean free path of 29 Á according to the different energy range [22,23]. Regarding C, it is difficult to quantify its amount due to the low and noisy C Is signal measured.…”

Section: Resultsmentioning

confidence: 99%

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Barrigón¹,

Brückner²,

Supplie³

et al. 2013

Journal of Crystal Growth

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GalnP nucleation on Ge(100) often starts by annealing of the Ge(100) substrates under supply of phosphorus precursors. However, the influence on the Ge surface is not well understood. Here, we studied vicinal Ge(100) surfaces annealed under tertiarybutylphosphine (TBP) supply in MOVPE by in situ reflection anisotropy spectroscopy (RAS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). While XPS reveals a P termination and the presence of carbon on the Ge surface, LEED patterns indicate a disordered surface probably due to by-products of the TBP pyrolysis. However, the TBP annealed Ge(100) surface exhibits a characteristic RA spectrum, which is related to the P termination. RAS allows us to in situ control phosphorus desorption dependent on temperature.

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Section: Resultsmentioning

confidence: 99%

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Barrigón¹,

Brückner²,

Supplie³

et al. 2013

Journal of Crystal Growth

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“…First, the increase of Ge coverage with deposition time results in the development of Ge 4p states on the low BE part of the spectra. 51,52 The He I UPS signal intensity of Ge 4p electrons is weak compared to O 2p electrons, because of the lower ionization cross section. 17 The dominant peak in spectra ͑5͒-͑7͒ is therefore assigned to O 2p states from uncovered Pr oxide surface regions, an interpretation in line with the residual Pr oxide signals detected above by XPS.…”

Section: -7mentioning

confidence: 99%

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Giussani

Seifarth

Rodenbach

et al. 2008

Journal of Applied Physics

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A combined structure and stoichiometry study on the growth behavior of single crystalline Ge(111) layers on PrO2(111)∕Si(111) heterostructures is presented. Ex situ x-ray diffraction techniques indicate that the interaction between Ge and PrO2(111) results in a complete reduction of the buffer oxide to a cubic Pr2O3(111) film structure. In situ reflection high energy electron diffraction, x-ray and ultraviolet photoelectron spectroscopy studies demonstrate that this chemical reduction of the oxide support occurs during the initial Ge growth stage. The interaction of PrO2 with Ge results in the formation of an amorphous Ge oxide layer by the diffusion of lattice oxygen from the dielectric to the forming semiconductor deposit. After the complete conversion of PrO2 to cubic Pr2O3, the supply of reactive lattice oxygen is exhausted and the continuous Ge deposition reduces the initially formed amorphous GeO2-like film to GeO. The sublimation of volatile GeO uncovers the single crystalline cubic Pr2O3(111) film surface which provides a thermodynamically stable template for elemental Ge heteroepitaxy. A Volmer–Weber growth mode is observed which results after island coalescence in the formation of atomically smooth, single crystalline Ge(111) layers.

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“…1͑a͔͒, nanometer-scale voids appear after the annealing at 800°C for 22 min ͓Fig. 21 For the annealing at 800°C, the Ge 2p 3/2 photoelectron intensity increases with annealing, suggesting that the photoelectrons are emitted from Ge surfaces in the voids. Furthermore, the void areas are expanded by subsequent isothermal annealing ͓Fig.…”

Section: Resultsmentioning

confidence: 98%

Structural degradation of thin HfO2 film on Ge during the postdeposition annealing

Miyata

Yasuda

Abe

2010

Journal of Applied Physics

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Articles you may be interested inEffect of substrate bias and oxygen partial pressure on properties of RF magnetron sputtered HfO2 thin films J. Vac. Sci. Technol. B 32, 03D104 (2014); 10.1116/1.4825234 Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing J. Vac. Sci. Technol. A 31, 01A127 (2013); 10.1116/1.4768167 Optical and structural properties of SiO x films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature J. Appl. Phys. 112, 094316 (2012); 10.1063/1.4764893Influence of chemical composition and deposition conditions on microstructure evolution during annealing of arc evaporated ZrAlN thin films Securing the thermal robustness of thin hafnium oxide ͑HfO 2 ͒ film on the semiconductor surface is an important technical issue in the fabrication of the metal-oxide-semiconductor field-effect transistor devices, as the HfO 2 -based high-k gate stacks usually undergo high-temperature processes. In this study, the structural development of thin HfO 2 film on a Ge surface during postdeposition annealing in an ultrahigh vacuum was examined to explore the origin for the initial degradation of thin HfO 2 film. Void nucleation and subsequent two-dimensional void growth take place at 780-840°C, while the chemical composition of the remaining Hf oxide is virtually stable. Both the void nucleation and growth processes show similar larger activation energy of about 10 eV. Based on the observed manner of void growth and the estimated activation energies, the authors propose that mass transport on the HfO 2 surface is responsible for void nucleation in the HfO 2 films on Ge. The authors also compare the present results with the previous studies on HfO 2 / Si structures, and suggest that similar surface process leads to the local Hf silicidation.

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Electron mean free paths in ge in the range 70–1400 eV

Cited by 35 publications

References 23 publications

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Structural degradation of thin HfO2 film on Ge during the postdeposition annealing

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