Electron Localization in Mixed-Valence Manganites

Coey, J. M. D.; Viret, M.; Ranno, Laurent; Ounadjela, K.

doi:10.1103/physrevlett.75.3910

Cited by 509 publications

(289 citation statements)

References 19 publications

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“…At the same time, the effective mass, which is estimated by the specific heat measurement, does not show any significant enhancement. 12 Hence, the change of the residual resistivity demonstrates that different ionic radii of the A-site cations indeed introduce the quenched disorder in the system, which scatters itinerant electrons at low temperatures and changes the lifetime of quasi-particles.…”

Section: Residual Resistivitymentioning

confidence: 99%

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Colossal Magnetoresistance and Quenched Disorder in Manganese Oxides

Furukawa

Motome

2005

ChemInform

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We give an overview on several recent topics of colossal magnetoresistive manganites in both experiments and theories, focusing on the effect of quenched disorder. The disorder is intrinsically involved since the compounds are solid solutions, and its importance has been pointed out in several experiments of transport and magnetic properties. Recent progress in the experimental control of the strength of disorder is also reviewed. Theoretically, the effect of the disorder has been explored within the framework of the double-exchange mechanism. Several efforts to understand the phase diagram and the electronic properties are reviewed. We also briefly discuss a recent topic on the effect of disorder on competing phases and the origin of colossal magnetoresistance.

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Section: Residual Resistivitymentioning

confidence: 99%

“…Coey et al reported the transport properties of A 0.7 A ′ 0.3 MnO 3 for various combinations of A 3+ and A ′2+ cations, and found that the residual resistivity largely depends on the combination of (A, A ′ ). 12 Temperature dependences of the resistivity are schematically shown in Fig. 1.…”

Section: Residual Resistivitymentioning

confidence: 99%

Colossal Magnetoresistance and Quenched Disorder in Manganese Oxides

Furukawa

Motome

2005

ChemInform

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“…Although only few data points are available here to suggest VRH charge transport to occur, possibly between defect Mn 2+ and Mn 3+ cations, it should be noted that the T dependence of charge transport in mixed valence manganitehopping systems commonly follows VRH laws. 59,60 A linear least-squares routine was employed to fit the Arrhenius ln(ρ 1 ) vs 1/T curve to Eq. (2) for T T C .…”

Section: Equivalent Circuit-fitting Parameters Of Bmo and Bfo Filmsmentioning

confidence: 99%

Magnetoimpedance spectroscopy of epitaxial multiferroic thin films

et al. 2012

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The detection of true magnetocapacitance (MC) as a manifestation of magnetoelectric coupling (MEC) in multiferroic materials is a nontrivial task, because pure magnetoresistance (MR) of an extrinsic MaxwellWagner-type dielectric relaxation can lead to changes in capacitance [G. Catalan, Appl. Phys. Lett. 88, 102902 (2006)]. In order to clarify such difficulties involved with dielectric spectroscopy on multiferroic materials, we have simulated the dielectric permittivity ε of two dielectric relaxations in terms of a series of one intrinsic film-type and one extrinsic Maxwell-Wagner-type relaxation. Such a series of two relaxations was represented in the frequency-(f -) and temperature-(T -) dependent notations ε vs f and ε vs T by a circuit model consisting in a series of two ideal resistor-capacitor (RC) elements. Such simulations enabled rationalizing experimental f -, T-, and magnetic field-(H -) dependent dielectric spectroscopy data from multiferroic epitaxial thin films of BiMnO 3 (BMO) and BiFeO 3 (BFO) grown on Nb-doped SrTiO 3 . Concomitantly, the deconvolution of intrinsic film and extrinsic Maxwell-Wagner relaxations in BMO and BFO films was achieved by fitting f -dependent dielectric data to an adequate equivalent circuit model. Analysis of the H -dependent data in the form of determining the H -dependent values of the equivalent circuit resistors and capacitors then yielded the deconvoluted MC and MR values for the separated intrinsic dielectric relaxations in BMO and BFO thin films. Substantial intrinsic MR effects up to 65% in BMO films below the magnetic transition (T C ≈ 100 K) and perceptible intrinsic MEC up to − 1.5% near T C were identified unambiguously.

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“…For samples B and C, we can now calculate localization lengths between 0.3 nm and 0.6 nm. Thus, the electrons are delocalized over several unit cells, as expected for magnetic polarons [19,20].…”

Section: Resultsmentioning

confidence: 88%

“…For the temperature dependence of the hopping probability (hopping frequency) p(T ) several variable-range hopping (VRH) [19,20,21] models, adiabatic polaron hopping (APH) [18,22,23] models, or combinations of both [24,25] were reported in the literature. Briefly, the concepts behind APH and VRH are explained in the following:…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

Thiessen

Beyreuther

Werner³

et al. 2015

Journal of Physics and Chemistry of Solids

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Abstract. Presently, cerium-doped LaMnO 3 is vividly discussed as an electron-doped counterpart prototype to the wellestablished hole-doped mixed-valence manganites. Here, La 0.7 Ce 0.3 MnO 3 thin films of different thicknesses, degrees of CeO 2 phase segregation, and oxygen deficiency, grown on SrTiO 3 single crystal substrates, are compared with respect to their resistancevs.-temperature (R vs. T) behavior from 300 K down to 90 K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10 nm and 100 nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO 2 clusters can completely change the type of hopping mechanism. This is shown by fitting the respective R-T curves with three different transport models (adiabatic polaron hopping, Mott variable-range hopping, Efros-Shklovskii variable-range hopping), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hopping energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.

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Electron Localization in Mixed-Valence Manganites

Cited by 509 publications

References 19 publications

Colossal Magnetoresistance and Quenched Disorder in Manganese Oxides

Colossal Magnetoresistance and Quenched Disorder in Manganese Oxides

Magnetoimpedance spectroscopy of epitaxial multiferroic thin films

Quantifying the electrical transport characteristics of electron-doped La0.7Ce0.3MnO3 thin films through hopping energies, Mn valence, and carrier localization length

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