Electron localization in metallic quantum wells: Pb versus In on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Si</mml:mi><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math>

Dil, J. Hugo; Kim, J. W.; Kampen, Thorsten; Horn, Karsten; Ettema, A.R.H.F.

doi:10.1103/physrevb.73.161308

Cited by 58 publications

(61 citation statements)

References 24 publications

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“…34,35 The measured results could be an order of magnitude larger than the bulk value and could even have a sign change. 34 This anomalous mass enhancement is absent for deeper lying QWSs.…”

Section: Conjecture To Solve the Anomalymentioning

confidence: 99%

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

et al. 2013

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Abstract:Quantum oscillations of work function and film stability as a function of the film thickness in Pb thin films on Si(111) are measured directly using scanning tunneling microscopy and spectroscopy in order to determine their phase relationship. The comparison of the phase relationship in quantum oscillations (surface energy vs. work function) reveals a complete surprise: in contrast to a theoretically predicted 1/4 wavelength phase shift in the phase relationship, we found that their quantum oscillations have identical phase for this particular system. A conjecture to resolve this contradiction is also provided.

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“…34,35 The measured results could be an order of magnitude larger than the bulk value and could even have a sign change. 34 This anomalous mass enhancement is absent for deeper lying QWSs.…”

Section: Conjecture To Solve the Anomalymentioning

confidence: 99%

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

et al. 2013

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“…On these respective √ 3 substrates thin crystalline Pb films were grown by deposition at a rate of 1 3 ML per minute after cooling down again to below 100 K. For the Pb √ 3-phase it is known that, under these growth conditions, high quality Pb films can be grown with monolayer resolution which support quantum well states 4,16,20 . One of the findings in this work is that also Pb layers deposited on the Bi interface accommodate well defined quantum well states.…”

Section: Methodsmentioning

confidence: 99%

“…In this system the inert graphene layer decouples the influence of the substrate. On the other hand Pb deposited on Pb-√ 3/Si(111) (henceforth Pb/Pb/Si(111)) is an example of a strong influence of the substrate 16,20 . For coverages up to 25 ML the states around SBZC have unusually high effective masses of up to m ≈ 10 m e , which can not be modeled with a freestanding film assuming a bulk Pb in-plane lattice constant.…”

Section: The In-plane Dispersion Of Qwsmentioning

confidence: 99%

“…Examples of these observations are the strong dependence of the Schottky barrier on the exact atomic structure 6 , the formation of magic height islands 7 , anomalies in the superconductivity transition temperature [8][9][10] , oscillations of the work function and extremely long excited state life times 11,12 , and the observation of a Rashba-type spin splitting 13 . The origin of many of these phenomena lies in the peculiar electronic structure of Pb on Si(111) manifested in the high in-plane effective mass [14][15][16] . A control of this effective mass can thus also give control over many of the other physical properties which make Pb films on Si such a rich research subject.…”

Section: Introductionmentioning

confidence: 99%

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Controlling the effective mass of quantum well states in Pb/Si(111) by interface engineering

et al. 2011

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The in-plane effective mass of quantum well states in thin Pb films on a Bi reconstructed Si (111) surface is studied by angle-resolved photoemission spectroscopy. It is found that this effective mass is a factor of 3 lower than the unusually high values reported for Pb films grown on a Pb reconstructed Si(111) surface. Through a quantitative low-energy electron diffraction analysis the change in effective mass as a function of coverage and for the different interfaces is linked to a change of about 2% in the in-plane lattice constant. To corroborate this correlation, density functional theory calculations are performed on freestanding Pb slabs with different in-plane lattice constants. These calculations show an anomalous dependence of the effective mass on the lattice constant including a change of sign for values close to the lattice constant of Si(111). This unexpected relation is due to a combination of reduced orbital overlap of the 6pz states and altered hybridization between the 6pz and the 6pxy derived quantum well states. Furthermore, it is shown by core-level spectroscopy that the Pb films are structurally and temporally stable at temperatures below 100 K. Controlling the effective mass of quantum well states in Pb/Si(111) by interface engineering The in-plane effective mass of quantum well states in thin Pb films on a Bi reconstructed Si(111) surface is studied by angle-resolved photoemission spectroscopy. It is found that this effective mass is a factor of three lower than the unusually high values reported for Pb films grown on a Pb reconstructed Si(111) surface. Through a quantitative low-energy electron diffraction analysis the change in effective mass as a function of coverage and for the different interfaces is linked to a change of around 2 % in the in-plane lattice constant. To corroborate this correlation, density functional theory calculations were performed on freestanding Pb slabs with different in-plane lattice constants. These calculations show an anomalous dependence of the effective mass on the lattice constant including a change of sign for values close to the lattice constant of Si(111). This unexpected relation is due to a combination of reduced orbital overlap of the 6pz states and altered hybridization between the 6pz and 6pxy derived quantum well states. Furthermore it is shown by core level spectroscopy that the Pb films are structurally and temporally stable at temperatures below 100 K.

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“…In the middle path from the Γ to the K point, a series of steep bands cross EF, indicating the metallic nature of the film. The m-shaped dispersion of the QWSs of the 24 ML film is also observed in thinner films [23][24][25]. However, coupling with the silicon valence band, which occurs in thinner Pb films, is not observed here.…”

Section: Resultsmentioning

confidence: 66%

Van Hove singularities as a result of quantum confinement: The origin of intriguing physical properties in Pb thin films

Sun

Souma

et al. 2010

Nano Res.

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In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS) have been used to study the electronic structure of Pb thin films grown on a Si (111) substrates. The experiments reveal that the electronic structure near the Fermi energy is dominated by a set of m-shaped subbands because of strong quantum confinement in the films, and the tops of the m-shaped subbands form an intriguing ring-like Van Hove singularity. Combined with theoretical calculations, we show that it is the Van Hove singularity that leads to an extremely high density of states near the Fermi energy and the recently reported strong oscillations (with a period of two monolayers) in various properties of Pb films.

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Electron localization in metallic quantum wells: Pb versus In onSi(111)

Cited by 58 publications

References 24 publications

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

Controlling the effective mass of quantum well states in Pb/Si(111) by interface engineering

Van Hove singularities as a result of quantum confinement: The origin of intriguing physical properties in Pb thin films

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