Electron irradiation effects on thin MOS capacitors

Candelori, A.; Paccagnella, A.; Cammarata, Marco; Ghidini, G.; Ceschia, M.

doi:10.1016/s0022-3093(98)00887-4

Cited by 13 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These behaviors may be attributed to the lack of free charges under irradiation. By the inspection of Figs 3 and 4, C and G/o increase at high forward and reverse voltages (Candelori et al, 1999;De Vasconcelos and Da Silva, 1997), but decreases in the range of low forward and reverse biases. The increase in C and G/o with radiation especially at forward bias is a result of the decreasing in the semiconductor depletion width.…”

Section: Resultsmentioning

confidence: 96%

The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

Taşçıoğlu

Tataroğlu

Özbay

et al. 2010

Radiation Physics and Chemistry

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 96%

The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

Taşçıoğlu

Tataroğlu

Özbay

et al. 2010

Radiation Physics and Chemistry

View full text Add to dashboard Cite

“…Here v is thermal velocity, and σ is capture cross‐section; v has only a strong temperature dependence, [ 10,17,32 ] σ has both temperature [ 33–35 ] and internal electric field [ 36–38 ] dependence. Candelori et al ., [ 39 ] Gross et al ., [ 40 ] and many others [ 38,41,42 ] reported that ionizing radiation generated new charge carrier distribution and internal electric field in dielectrics. Furthermore, Krantz et al .…”

Section: Resultsmentioning

confidence: 99%

Analysis of alpha‐alumina by variable dose and T_m–T_STOP methods and simulations of the whole process

Uzun

2021

Luminescence

View full text Add to dashboard Cite

The Tm–TSTOP and the variable dose methods were applied to alumina experimentally, and then all the steps of the methods were simulated numerically. The Tm–TSTOP experiments were performed between 70 and 300°C, and results showed that the glow curve of the used alumina had six distinct peaks between 40 and 400°C. The glow curves were analyzed using computerized glow curve fitting programs, the analytical equations were also fitted to the experimental data, and the trapping parameters of the peaks were measured. The samples were irradiated above the saturation level to ensure the complete filling of the electron traps and, therefore, the concentrations of traps were measured experimentally. Short‐term anomalous fading behaviours of the peaks were investigated, and a new equation was proposed to compute the anomalous fading rate. In addition, the variable dose and Tm–TSTOP methods were simulated using the six trap‐one recombination centre (6T1C) model and the experimental trapping parameters. Results showed that there was good harmony between numerical and experimental glow curves. After all the simulations were performed with acceptable accuracy, an estimate was made for the trapping coefficients (Ai = 1–6) that could not be measured directly from thermoluminescence experiments. Results showed that the trapping coefficients were affected by the applied dose.

show abstract

Au/SnO2/n-Si (MOS) structures response to radiation and frequency

Tataroğlu

Altındal

Karadeniz³

et al. 2003

Microelectronics Journal

View full text Add to dashboard Cite

Electron irradiation effects on thin MOS capacitors

Cited by 13 publications

References 16 publications

The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

Analysis of alpha‐alumina by variable dose and T_m–T_STOP methods and simulations of the whole process

Au/SnO2/n-Si (MOS) structures response to radiation and frequency

Contact Info

Product

Resources

About

Electron irradiation effects on thin MOS capacitors

Cited by 13 publications

References 16 publications

The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

Analysis of alpha‐alumina by variable dose and Tm–TSTOP methods and simulations of the whole process

Au/SnO2/n-Si (MOS) structures response to radiation and frequency

Contact Info

Product

Resources

About

Analysis of alpha‐alumina by variable dose and T_m–T_STOP methods and simulations of the whole process