Electron Irradiation Effects on the Optical and Electrical Properties of ZnO/Ag/SnO&lt;sub&gt;2&lt;/sub&gt; Thin Films

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Transparent and conductive Ti doped In2O3 (TIO) films were prepared on slide glass substrate using a radio frequency (RF) magnetron sputter and then subjected to Transparent and conductive Ti doped In2O3 (TIO) films were prepared on a glass slide substrate using radio frequency (RF) magnetron sputter. The film surface was then subjected to intense electron beam irradiation, to study the influence of incident energy on the visible transmittance and electrical resistivity of the films. All x-ray diffraction plots exhibited some diffraction peaks of the cubic bixbyite In2O3 (222), (400), (332), (431), (440), and (444) planes regardless of the electron irradiation energy, while the characteristic diffraction peak for crystalline TiO2 did not appear even when irradiated at 1500 eV. In atomic force microscope analysis, the surface roughness of the as deposited TIO films was found to be 0.63 nm. As the electron irradiation energy was increased up to 1500 eV, the root mean square roughness decreased down to 0.36 nm. The films electron irradiated at 1500 eV showed higher visible transmittance of 83.2% and the lower resistivity of 6.4 × 10-4 Ωcm compared to the other films. From the electrical properties and optical band gap observation, it is supposed that the band gap shift is related to the carrier density. The band gap enlarged from 4.013 to 4.108 eV, along with an increase in carrier density from 9.82 × 1019 to 3.22 × 1020 cm-3.

Enhanced Optical and Electrical Properties of Ti Doped In2O3 thin Films Treated by Post-deposition Electron Beam Irradiation

Choe¹,

Park²,

Kim³

et al. 2020

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Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Lee¹,

Tukhtaev²,

Yoo³

et al. 2022

High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have made significant progress as amorphous silicon replacements for electronics and commercial displays. On the other hand, developing metal oxide transistors with low processing temperatures remains a difficulty. The hightemperature annealing process causes very instability in the plastic substrate. Here, we introduce IGZO TFTs that shows enhanced electrical properties environmental stability by laser post-annealing. After annealing process, the laser post-annealing process was given at 80 MHz, pulse width 140 fs, for 50 seconds. The improved electrical characteristics of this laser post-annealed IGZO TFTs were: 9.03 cm2/Vs; 2.2×107 on/off current ratio. The IGZO TFT to which laser post-annealing was applied had a flat surface, and it was confirmed that the combination of internal metal and oxygen was urged, and the leakage current problem was improved by suppressing excessive generation of oxygen vacancy. Furthermore, the voltage transfer curve was measured after fabricating the N-MOS logic inverter circuit, this inverter showed a value of 80.8% the total noise margin.

Effects of Electron Irradiation on the Properties of ZnO/Au/ZnO Films Deposited on Poly-Imide Substrates

Jang¹,

Park²,

Lee³

et al. 2022

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Transparent and conductive ZnO 50 nm/Au 8 nm/ZnO 50 nm tri-layer films were deposited on poly-imide films by radio frequency (RF) and direct current (DC) magnetron sputtering at room temperature, and then the effect of electron irradiation on the crystallization, electrical resistivity and optical properties of the films was considered with X-ray diffraction, UV-visible spectrometer, Atomic force microscope and Hall measurement system. All the films were deposited at a fixed sputtering power, Ar gas flow rate, and distance between target and substrate, while the post-deposition electron irradiation energy was varied from 300 to 900 eV. The electron irradiated films exhibited a flatter surface than the as deposited films that were not electron irradiated, and the XRD patterns also revealed that the electron irradiated films had larger grain sizes than that of as deposited films. The films electron irradiated at 900 eV also showed a higher visible transmittance of 79.8% and a lower sheet resistance of 56.0 Ω/□. Post-deposition films electron irradiated at 900 eV showed a higher figure of merit of 1.86×10-3 Ω-1 than that of the as deposited film of 1.29×10-3 Ω-1. The optical band gap was also enhanced by electron irradiation. The films electron irradiated at 900 eV showed a higher optical band gap of 4.07 eV.