Electron interaction, charging, and screening at grain boundaries in graphene

Ihnatsenka, S.; Zozoulenko, Igor

doi:10.1103/physrevb.88.085436

Cited by 24 publications

(25 citation statements)

References 35 publications

(78 reference statements)

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“…Therefore, because of its promise for large-area electronic applications, a detailed understanding of the electrical transport properties of polycrystalline graphene is crucial. To this end, a great deal of experimental [13,[18][19][20][21][22][23][24][25][26][27] and theoretical [7,[28][29][30][31][32][33][34][35][36][37][38] effort has has been devoted to studying charge transport across individual graphene GBs, and several reviews have already discussed this topic in great detail [5,26,39]. Therefore, here we briefly summarize the main features of electrical transport across individual graphene GBs before shifting our focus to a more global perspective of charge transport in polycrystalline graphene.…”

Section: Charge Transport In Polycrystalline Graphenementioning

confidence: 99%

Scaling properties of polycrystalline graphene: a review

et al. 2016

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We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young's modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. Both the local and global features of polycrystalline graphene have been investigated by a variety of simulations and experimental measurements. In this review, we summarize the properties of polycrystalline graphene, and by establishing a perspective on how the microstructure impacts its large-scale physical properties, we aim to provide guidance for further optimization and improvement of applications based on this material, such as flexible and wearable electronics, and high-frequency or spintronic devices.

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Section: Charge Transport In Polycrystalline Graphenementioning

confidence: 99%

Scaling properties of polycrystalline graphene: a review

et al. 2016

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“…It is well known that at each 5-7 defect, there are defect states. They may hybridize along the grain boundary, which then becomes metallic, as has been discussed in several papers [20][21][22][23]. In a magnetic field, with the grain boundary connecting the upper and lower edges, the question arises what will happen with the edge state current flow.…”

Section: Ri Rjmentioning

confidence: 99%

Influence of [0001] tilt grain boundaries on the destruction of the quantum Hall effect in graphene

2015

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The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the quantum Hall effect in graphene with [0001] tilt grain boundaries connecting opposite sides of Hall bar devices. Such grain boundaries contain 5-7 ring complexes that host defect states that hybridize to form bands with varying degree of metallicity depending on grain boundary defect density. In a magnetic field, edge states on opposite sides of the Hall bar can be connected by the defect states along the grain boundary. This destroys Hall resistance quantization and leads to non-zero longitudinal resistance. Anderson disorder can partly recover quantization, where current instead flows along returning paths along the grain boundary depending on defect density in the grain boundary and on disorder strength. Since grain sizes in graphene made by chemical vapor deposition are usually small, this may help explain why the quantum Hall effect is usually poorly developed in devices made of this material. The half-integer quantum Hall effect (QHE) [1,2] in monolayer graphene grown on silicon-carbide substrates has been observed to metrological accuracy [3][4][5]. Very high breakdown currents have been recorded, and quantization remains accurate also at elevated temperatures. This material may therefore be the next choice for an improved resistance standard. On the other hand, QHE plateaux have not been measured to the same level of accuracy on Hall bars made of graphene grown by chemical vapor deposition (CVD) [6,7]. The reason for this disparity is unclear, but it may be due to extrinsic effects, such as defects and inhomogeneity introduced in the process of graphene transfer from substrates used in the growth to other substrates used for devices, or due to defects in the material itself, such as grain boundaries that usually are found in graphene made by CVD [8].In a recent experiment [7], it was indeed argued that grain boundaries may be the source of reduced quantization in devices made of CVD graphene. A clear theoretical picture of how the QHE is destroyed in graphene with grain boundaries is however still lacking. One particular and very special type of grain boundary has been considered theoretically in the literature before [7,9]. The grain boundary consists of a perfect row of 5-8-5 ring complexes that separates two perfect armchair ribbons oriented along the same axis. To join the armchair ribbons to the grain boundary, the ribbons are cut at 90• to their armchair edges so that perfect zigzag edges are formed. These zigzag edges can be attached to the grain boundary. In a magnetic field, a picture appears of current flowing along an armchair edge in the ribbon and along a zigzag edge along the grain boundary over to the opposite edge of the ribbon where the current can flow back in the opposite direction. This special type of grain boundary is not the only or typical grain...

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“…[1][2][3] Especially, electron-electron interaction in graphene nanoribbons has been studied theoretically to quite some extent. [4][5][6][7][8][9][10] In particular, the presence of a magnetic field gives rise to a number of transport phenomena unique to Dirac fermions. For example, high-quality graphene has already shown anomalous patterns in the magnetoconductance called Hofstadter's butterfly due to the moiré superlattice of graphene/hexagonal boron nitride (hBN) heterostructures [11,12] or quantum Hall ferromagnetism at the Dirac point.…”

Section: Introductionmentioning

confidence: 99%

Insulating State in Low‐Disorder Graphene Nanoribbons

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Volk

Buckstegge

et al. 2019

Physica Status Solidi (b)

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Quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN) are reported. At zero magnetic field, the devices behave qualitatively very similar to those reported for graphene nanoribbons on SiO2 or hBN, but exhibit a considerably smaller transport gap. At magnetic fields of around 3 T, the transport behavior changes significantly and is dominated by a much larger energy gap induced by electron–electron interactions which completely suppress the transport. This energy gap increases with a slope in the order of 3–4 meV T−1, reaching values of up to 30 meV at 9 T.

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Electron interaction, charging, and screening at grain boundaries in graphene

Cited by 24 publications

References 35 publications

Scaling properties of polycrystalline graphene: a review

Scaling properties of polycrystalline graphene: a review

Influence of [0001] tilt grain boundaries on the destruction of the quantum Hall effect in graphene

Insulating State in Low‐Disorder Graphene Nanoribbons

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