Electron Induced Nanoscale Nuclear Spin Relaxation Probed by Hyperpolarization Injection

Beatrez, William; Pillai, Arjun; Janes, Otto; Suter, Dieter; Ajoy, Ashok

doi:10.1103/physrevlett.131.010802

Phys. Rev. Lett.

2023

DOI: 10.1103/physrevlett.131.010802

|View full text |Cite

Electron Induced Nanoscale Nuclear Spin Relaxation Probed by Hyperpolarization Injection

William Beatrez

Arjun Pillai

Otto Janes

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Article1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the background concentration of vacancies in the 6H-SiC samples currently available to us does not allow us to do so. In future work, we will try to obtain more specific data for the relaxation times of the different centers and determine the different hyperfine coupling constants, and utilize them for hyperpolarization applications[51][52][53][54].…”

mentioning

confidence: 99%

Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC

Singh,

Anisimov,

Baranov

et al. 2023

Mater. Res. Express

Self Cite

View full text Add to dashboard Cite

Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we focus on the three important charged silicon vacancies in the 6H-SiC polytype. We record the photoluminescence and continuous-wave optically detected magnetic resonance (ODMR) spectra at different radio-frequency power levels and different temperatures. We individually select the zero-phonon lines of the different silicon vacancies at low temperatures and record the corresponding ODMR spectra. ODMR allows us to correlate optical and magnetic resonance spectra and thereby separate signals from V 1 and V 3. The results also explain the observed sign change of the ODMR signal as a function of temperature.

show abstract

mentioning

confidence: 99%

Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC

Singh,

Anisimov,

Baranov

et al. 2023

Mater. Res. Express

Self Cite

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Electron Induced Nanoscale Nuclear Spin Relaxation Probed by Hyperpolarization Injection

Cited by 1 publication

References 47 publications

Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC

Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC

Contact Info

Product

Resources

About