2020
DOI: 10.1103/physreva.101.062706
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Electron-impact recombination and excitation rates for charge-state-selected highly charged Si ions

Abstract: Charge-state selective recombination rate coefficients were measured by time of flight (TOF) analyzed highly charged Si ions extracted from an electron-beam ion trap. Additionally, the combination of simultaneous TOF and x-ray measurements and a separation of the dielectronic recombination contribution in the x-ray spectra is used for extracting electron-impact excitation rate coefficients for several overlaying charge states. Experimentally derived dielectronic recombination spectra for XIII and XIV Si are co… Show more

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Cited by 9 publications
(8 citation statements)
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References 32 publications
(46 reference statements)
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“…Continuing those works, we focus on the DR 3l3l (LMM) satellites of Fe XVII, and provide experimental resonant strengths and rate coefficients. Similar measurements were previously done for Au (Schneider et al 1992), Xe (DeWitt et al 1992), and more recently for Si (Lindroth et al 2020). In this work, we remeasured previously studied Fe XVII LMM region by our group (see Shah et al (2019)) with another electron beam ion trap (EBIT), PolarX-EBIT (described in Micke et al (2018)).…”
Section: Introductionsupporting
confidence: 82%
“…Continuing those works, we focus on the DR 3l3l (LMM) satellites of Fe XVII, and provide experimental resonant strengths and rate coefficients. Similar measurements were previously done for Au (Schneider et al 1992), Xe (DeWitt et al 1992), and more recently for Si (Lindroth et al 2020). In this work, we remeasured previously studied Fe XVII LMM region by our group (see Shah et al (2019)) with another electron beam ion trap (EBIT), PolarX-EBIT (described in Micke et al (2018)).…”
Section: Introductionsupporting
confidence: 82%
“…Taking into account all feeding and loss channels, a consistent description of the charge balances of the ions after probing could be obtained by solving the rate equations for the different electron energies. The solutions of the rate equations are treated in detail in [14] for S and [15] for Si. By employing the number of ions obtained from TOF measurements in rate equations, the E e -dependent electron-ion recombination rate coefficients are obtained for the individual charge states.…”
Section: Resultsmentioning
confidence: 99%
“…And, after the probing time, the ions were extracted by a ns voltage pulse from a Behlke switch and sent along a flight path of 3 m. Then the extracted ions were detected by a fast (>ns rise time) open electron multiplier. For each extraction, the probing energy and the digitized TOF spectrum containing the six highest charge states of Si or S were saved [14,15]. A schematic of the S-EBIT operation and data taking system for the coupled photon detection and TOF measurement is shown in figure 1.…”
Section: Methodsmentioning
confidence: 99%
“…The observation of DR resonances has been done frequently in EBIT devices with HCI. To name a few examples, there are reports of observations of K-LL and L-MM in gold [15,16], K-LL of several charge states of xenon [17], K-LL in H-like krypton [18], K-Ln of several charge states of silicon [19] and L-Mn of Ne-like iron [20][21][22]. In this work, we observed the L-Mn resonant structure of Ce 33+ to Ce 41+ with n = M, N, O.…”
Section: Introductionmentioning
confidence: 99%