Electron-hole liquid in GaP

Maaref, Hichem; Barrau, J.; Brosseau, M.; Collet, J.; Mazzaschi, J.

doi:10.1016/0038-1098(77)90144-2

Cited by 43 publications

(3 citation statements)

References 6 publications

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“…With T-1 equal to 0.01 and the sound The occurrence of a liquid phase of degenerate electron-hole plasma (EHL) is now well established in Ge, 1 Si, 1 and GaP. 2 The properties of the liquid are in good agreement with theory, provided the detailed band parameters of these semiconductors (in particular their indirect-bandtransition structure) is properly taken into account. Recently, it has been shown by Keldysh and Silin, 3 and Beni and Rice, 4 that the interaction between free carriers and the lattice in polar materials increases the stability of EHL, and makes it possible to observe it even in direct-gap compounds.…”

mentioning

confidence: 92%

Electron-Hole Liquid and Biexciton Pocket in AgBr

et al. 1977

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mentioning

confidence: 92%

Electron-Hole Liquid and Biexciton Pocket in AgBr

et al. 1977

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“…The cathodoluminescence experiment has been described previously [4]. The light is focused into a 0.6 m Jobin-Yvon grating monochromator with slits set at 3 meV resolution.…”

Section: Introduction -Iii-v Semiconductors Com-mentioning

confidence: 99%

Effect of compensation on recombination into Si doped (Ga, Al)As

Mazzaschi

Barrau

Brabant

et al. 1980

Rev. Phys. Appl. (Paris)

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Using a time-resolved cathodoluminescence technique, we have investigated the radiative recombination in highly doped (Ga, Al)As epitaxial layers (the dopant was Si or Ge). We have realized in homogeneous Si-doped epitaxial (Ga, Al)As layers the conditions of large luminescence efficiency and great decay time usually observed in L.E.D. obtained by double liquid phase epitaxy of (Ga, Al)As on GaAs substrate. The phenomena are well explained if we consider the effect of charge impurity fluctuations in compensated semiconductors on the density of state tails at the edges of the band-gap

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“…Nos expériences de cathodoluminescence ont été réalisées à l'aide d'un appareillage déjà décrit [1].…”

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Cathodoluminescence de défauts dans le diamant naturel

Mazzaschi

Barrau

Brabant

et al. 1980

Rev. Phys. Appl. (Paris)

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Nous étudions deux défauts dans le diamant naturel semiconducteur. La raie d'émission du premier, située à 3,158 eV à 4 K, est attribuable à une transition entre le niveau excité 4T1 et le niveau de base 4A2 du centre ND 1. Le second est positionné entre 3,8 et 4,581 eV et est caractérisé par un couplage privilégié avec un mode local de vibration d'énergie 236 meV : son spectre a été noté 5 RL par Wight [7]. Nous proposons l'identification à un complexe lacune de carbone-accepteur

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Electron-hole liquid in GaP

Cited by 43 publications

References 6 publications

Electron-Hole Liquid and Biexciton Pocket in AgBr

Electron-Hole Liquid and Biexciton Pocket in AgBr

Effect of compensation on recombination into Si doped (Ga, Al)As

Cathodoluminescence de défauts dans le diamant naturel

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