Electron field emission from boron-nitride nanofilms

Sugino, Takashi; Kimura, Chiharu; Yamamoto, T.

doi:10.1063/1.1477622

Cited by 97 publications

(63 citation statements)

References 18 publications

(17 reference statements)

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“…It has recently been found that boron nitride coated graphite nanofibers also emit electrons at much reduced (from 1.5 to 0.8 V/mm) the threshold with high (10 2 level) intensity compared with the uncoated carbon fibers [490]. It is explained that introduction of the BN nanofilm leads to a significant reduction in the effective potential barrier height [491]. A tendency of N-buckling outward the BN nanotubes has been observed theoretically [492].…”

Section: Joint Size and Catalytic Effects: Pl Of Nanometric Siomentioning

confidence: 96%

Oxidation electronics: bond–band–barrier correlation and its applications

Sun

2003

Progress in Materials Science

215

167

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Section: Joint Size and Catalytic Effects: Pl Of Nanometric Siomentioning

confidence: 96%

Oxidation electronics: bond–band–barrier correlation and its applications

Sun

2003

Progress in Materials Science

215

167

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“…In fact, high turn-on fields of 8.3 to 15.2 V lm -1 [202] were measured on microcrystalline BN thin films. For comparison, the best field emitters made of aligned CNTs typically exhibit turn-on fields in the range of 1-3 V lm -1 .…”

Section: Field-emitting Devicesmentioning

confidence: 99%

Boron Nitride Nanotubes

et al. 2007

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The current status of research on boron nitride nanotubes (BNNTs)—carbon nanotube structural analogues—is discussed. Latest achievements in BNNT synthesis, morphology, and atomic structure analysis as well as physical, chemical, and functional property evaluations are reviewed. Similarities and differences between structural parameters and properties of BNNTs in comparison with conventional carbon nanotubes are particularly highlighted. Recent breakthroughs in BNNT filling, doping and functionalization, morphology, and electronic structure engineering are examined. Finally, prospective BNNT applications for fabricating field‐effect transistors, gas accumulators, and reinforcing polymer films are presented.

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“…Some reports have presented the field emission characteristics for the BCN [5,6]. The turn-on electric field of the electron emission as low as that of the BN film has been achieved for the BCN film with C composition ratio lower than 20% [7].…”

Section: Introductionmentioning

confidence: 95%