A large enhancement, up to a factor of 30, of the photon intensity is observed in inverse photoemission when the emitted photon energy equals the plasmon energy. The effect is explained as a resonance between a discrete channel, i.e., radiative decay of a plasmon, and the inverse photoemission continuum. Examples are shown for various structures of antimony films.PACS numbers: 79.20.Kz, 73.20.Mf Resonant photoemission has generated considerable interest for the study of multielectron phenomena in solids. 2 In general, such resonant phenomena can be described as an interaction between a discrete channel and a continuum. 3 Analogous effects 4 have been observed in the time-reversed photoemission process, i.e., inverse photoemission 5 or bremsstrahlung isochromat spectroscopy. So far, these resonant phenomena have involved a core-to-valence transition as the discrete channel. Therefore, they are limited to the high-energy regime where core levels are accessible. We see a new type of resonance which is based on a plasmon excitation as the discrete channel. The observed resonant enhancement is dramatic (a factor of 30 in the example shown below). An analogous effect is predicted to exist in photoemission.An overview of the resonance effect is given in Fig. 1. The data were taken for a thin Sb film evaporated onto a cleaved InP(l 10) crystal. It shows a series of spectra for the photons that are produced by electrons arriving with energy E[ at the Sb surface. The electron energies range from Eir = 11.6 eV above the Fermi level E? (top curve) to Et =28.6 eV (bottom curve) in steps of 0.5 eV. The spectrum of emitted photons is recorded by a spectrograph with a position-sensitive detector as described previously. 7 The two channels that lead to emission of photons can be identified by their energy dependence. The discrete channel emits photons of a fixed photon energy which equals the plasmon energy of the Sb film hco p = 16.4 eV. 8 Thus, it corresponds to a vertical line in Fig. 1. The inverse photoemission continuum is characterized by a photon spectrum with an upper limit at hco^Ei-Ef: corresponding to a diagonal line in Fig. 1 (arrow labeled E?). This upper limit corresponds to radiative transitions into empty electronic states just above £F-For the Sb film on InP(l 10) several empty electronic (surface) states are observed at constant final-state energies. The lowest state is located at JEF + 0.25 eV. Transitions into higher-lying final states (e.g., at E? +0.95 eV and £V+3.9 eV) correspond to diagonal lines displaced downwards from the E? arrow by the energy of the final states. Whenever one of these diagonal ridges crosses the vertical plasmon line there is a resonant enhancement that by far exceeds the mere sum of the two channels. For the state at ZTF + 0.25 eV the intensity increases by a factor of 30 at resonance and leads to signal levels that are at least an order of magnitude higher than those we have encountered with any material stud-T