1987
DOI: 10.1103/physrevb.35.9203
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Electron-energy-loss rates inAlxGa1

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Cited by 89 publications
(45 citation statements)
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“…respectively, where the constant (27) originates from the screening of the el-ph interaction and therefore does not appear in Eq. (24) for unscreened deformation potential interaction.…”
Section: Analytic Low-temperature Limitsmentioning
confidence: 99%
“…respectively, where the constant (27) originates from the screening of the el-ph interaction and therefore does not appear in Eq. (24) for unscreened deformation potential interaction.…”
Section: Analytic Low-temperature Limitsmentioning
confidence: 99%
“…Hot electron relaxes to lower temperature via acoustic phonon emission. There are numerous experimental and theoretical studies [39][40][41][42][43][44][45][46][47][48][49] on hot-electron energy-loss rate of a 2DES without RSOI.…”
Section: Introductionmentioning
confidence: 99%
“…At low enough temperatures k B T ≪hw LO , where ω LO is the frequency of the dispersionless LO phonon, the inclusion of the phonon propagator renormalization may enhance the energy relaxation rate by orders of magnitude compared with loss through bare LO-phonon (which is exponentially small for k B T ≪hω LO ). Deviation from the naive bare-phonon result, which gives an exponentially decaying energy relaxation rate as electron temperature is lowered, is a ubiquitous phenomenon in hot-electron energy loss experiments [5][6][7][8][9], and has usually been uncritically ascribed to acoustic-phonon contribution, in spite of the fact that merely including the acoustic-phonon emission could not account for the total observed power loss. This puzzle is resolved by including the enhancement from the renormalization of the LO-phonon propagator.…”
mentioning
confidence: 99%
“…The study of this subject also constitutes a direct probe of a fundamental interaction in condensed matter physics, namely, the electron-phonon interaction. There has been considerable recent theoretical and experimental interest in the hot-electron energy relaxation problem in polar semiconductors, particularly in three-dimensional (3D) and two-dimensional (2D) GaAs structures [1][2][3][4][5][6][7][8][9]. More recently, one-dimensional (1D) hot-electron relaxation in quantum wire structures has been considered theoretically [10][11][12], motivated by the fact that there has been successful growth of one-dimensional GaAs quantum-well wires with only the lowest subband occupied [13].…”
mentioning
confidence: 99%