Electron Energy-Loss Near-Edge Structure Studies of a Cu/(11-20)?-Al2O3 Interface

Scheu, Christina; Stein, Wilhelm; Rühle, M.

doi:10.1002/1521-3951(200011)222:1<199::aid-pssb199>3.0.co;2-2

Cited by 34 publications

(13 citation statements)

References 44 publications

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“…Both spectra exhibit a prominent peak at the edge onset and show a chemical shift of the edge onset by 1.8 ± 0.3 eV to higher energy‐losses compared to the edge onset in metallic Cu. The shape and edge onset of the interfacial Cu‐L 2,3 ELNES are similar to spectra from copper‐aluminium‐intermetallic compounds (see for example Scheu et al . (2000)).…”

Section: Resultsmentioning

confidence: 99%

“…Thus, for the investigated Cu‐L 2,3 and O‐K spectra, only the contributions from either bulk Cu or bulk Al 2 O 3 have to be considered. The scaling factor α, which takes into account the fact that different numbers of bulk atoms are irradiated during the acquisition of the bulk spectrum and the spectrum from the interface region, was calculated as described in Scheu et al . (2000) using the equation 1 :…”

Section: Methodsmentioning

confidence: 99%

“…(1999). Another possibility is the estimation of scaling factors from the interfacial width determined from linescans or structure models obtained by ab initio calculations or simulation of high‐resolution transmission electron microscopy (TEM) images (Scheu et al ., 2000).…”

Section: Introductionmentioning

confidence: 97%

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Electron energy‐loss near‐edge structure studies at the atomic level: reliability of the spatial difference technique

Scheu¹

2002

Journal of Microscopy

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SummaryThe spatial difference technique was applied to determine the interface-specific components of electron energy-loss nearedge structures and the results are in good agreement to those obtained by atomic column resolved measurements averaged over one atomic layer. In previous studies an experimental set-up had been chosen where the scanning areas, which are used to measure electron energy-loss spectra, were symmetrical in respect to the location of the investigated interfaces. In the present study, an asymmetric setting of the scanning areas was applied, which allows the interfacial signals to be determined directly. Comparing the results of the different measurements shows that the spatial difference technique is valid and can be used to obtain information about the electronic structure of interfaces where single atomic column resolved measurements are not yet possible.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Electron energy‐loss near‐edge structure studies at the atomic level: reliability of the spatial difference technique

Scheu¹

2002

Journal of Microscopy

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“…Quantitative interpretation of the image and building the interface atomic structure model depends on image simulation. Based on the well-established dynamic electron scattering theory, [91] the well accepted computer software, [92] and iterative matching between the experimental image and the calculated image based on the proposed model, the atomic structure at the interface is quantitatively refined. Figure 21a reveals a simulated HRTEM image of the interface using an Al-terminated Al 2 O 3 model, and the result is inserted in the figure.…”

Section: Quantitative Electron Diffraction For Refining Atomic Structmentioning

confidence: 99%

New Developments in Transmission Electron Microscopy for Nanotechnology

Wang¹

2003

Advanced Materials

160

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Nanotechnology, as an international initiative for science and technology in this century, is a focused area of current research. Advanced nanomaterials and advanced manufacturing are the foundation of nanotechnology. Tracking the historical background of why nanotechnology and why now, it is believed that the following facts may contribute to this global initiative.[1] First, the road map for microelectronics and microsystems will be reaching its limit in about 10 years. As the size of interconnects is thinner than 100 nm and one electron can ignite the switching of a device (so called single electron device), quantum mechanical phenomena are becoming appreciable and dominant. Nanoscale technology is not simply a miniaturization in sizes, but an in-depth revolution in physical concepts, system design, and materials manufacturing. Philosophically, a change in quantity results in a change in quality. Secondly, the development of transmission electron microscopy and scanning probe microscopy allows direct imaging of atomic structures in solids and on surfaces, and these powerful tools provide the ªeyesº and ªhandsº for imaging and manipulating the nanoscale world, fulfilling the dream of moving atoms ªone-by-oneº. This provides a unique opportunity for designing, modifying, and constructing nanoscale structures. Third, the newly discovered nanostructures, such as carbon nanotubes, quantum dots, semiconducting oxide nanobelts, etc. display the diversity and richness of the nano-scale world.[2]The unique, novel, and largely improved properties demonstrated by these structures have illustrated a blue print for the next technological revolution in human civilization. Finally, the powerful modeling techniques and supercomputers can predict possible phenomena that could be realized experimentally, providing guidance in materials design and system analysis. High-resolution transmission electron microscopy (HRTEM) is one of the most powerful tools used for characterizing nanomaterials, and it is indispensable for nanotechnology.[2] In fact, decades before the national nanotechnology initiative, scientists had started examining ªsmall particlesº (nowadays these are called ªnanoparticlesº) by HRTEM. It was not until the early 1990s that inventions of various types of scanning probe microscopy allowed scientists to manipulate at the nanoscale. Traditionally, HRTEM has been mainly applied for imaging, diffraction, and chemical analysis of solid materials.[3] Carbon nanotubes, for example, were first identified by HRTEM. [4,5] Analysis of such tubular structures requires extensive development of electron microscopy, which has been covered very comprehensively in the book edited by Wang.[6]Conventional imaging and diffraction are the two most powerful methods in characterizing the phase structure and phase transformation of inorganic materials. With the assistance of energy dispersive X-ray spectroscopy (EDS) and electron energy-loss spectroscopy (EELS), the transmission electron microscope is a versatile and comprehensive analy...

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“…27,28 This technique can easily be applied to the spectra from area measurements because these spectra have a high signal-to-noise ratio. We assumed that the dislocation core specific signal originates from atoms located up to the second-nearest neighbor from the core.…”

Section: Area Measurementmentioning

confidence: 99%

HRTEM and EELS study of screw dislocation cores inSrTiO3

2004

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A ͓100͔ twist low-angle grain boundary in SrTiO 3 was systemically studied by means of conventional transmission electron microscopy, high-resolution transmission electron microscopy ͑HRTEM͒, lattice distortion analysis, and electron energy-loss spectroscopy ͑EELS͒. A dislocation network is formed in the grain boundary by two sets of a͗100͘ screw dislocations. HRTEM images show that the image contrast in the core region is different from that in the surrounding bulk. Image analysis reveals that compared with an ideal screw dislocation the dislocation core is expanded, probably due to both surface relaxation and a reconstruction of the core. The EELS spectra show a small increase of the Ti/O ratio but no significant change of the Sr/Ti ratio in the core region. From the increase of the Ti/O ratio it is concluded that the dislocation cores are oxygen deficient, which may be responsible for the expansion of the core. Ti L 2,3 EELS spectra show a reduction of Ti in the screw dislocation cores as well as a reduced crystal field splitting, both of which are in accordance with a loss of oxygen.

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Electron Energy-Loss Near-Edge Structure Studies of a Cu/(11-20)?-Al2O3 Interface

Cited by 34 publications

References 44 publications

Electron energy‐loss near‐edge structure studies at the atomic level: reliability of the spatial difference technique

Electron energy‐loss near‐edge structure studies at the atomic level: reliability of the spatial difference technique

New Developments in Transmission Electron Microscopy for Nanotechnology

HRTEM and EELS study of screw dislocation cores inSrTiO3

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