Electron emission from a semiconductor quantum ring under normally incident radiation

Abstract

In this paper we investigate the current density due to electrons emitted during normal irradiation of a toroidal quantum ring of a strongly degenerate wide-gap semiconductor. The computed results show that the current density increases in a step-like manner with increase in the incident photon energy. Increased current density can be obtained by reducing the dimensions of the ring. The threshold energy for photoemission becomes an oscillatory function of the cross-sectional radius, and can be used as an important tool for monitoring parameters such as the cross-sectional radius and doping density. The threshold energy is, however, independent of the circumference of the ring.

CdSe Colloidal Quantum Rings

“…Furthermore, the peculiar electronic structure of QRs has an importance for more fundamental physical studies 4,8,32,33 and light matter interaction. 34,35 Here, we present the synthesis and characterization of CdSe colloidal QRs grown around 3 and 4 monolayers. The samples are characterized by elemental analysis, X-ray diffraction, transmission electron microscopy, absorption, photoluminescence emission and photoluminescence excitation spectroscopy.…”

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

“…It may be noted that the said equation is valid for both charge carriers and in this conventional form the photoemission changes with temperature, work function and the incident photon energy. This relation holds only under the condition of carrier non-degeneracy [20]. …”