Electron effective mass and electronic structure in nonstoichiometric amorphous Indium Gallium Zinc Oxide films

Zhu, Xuemei; Yang, Yang; Liu, Xin-Dian; Li, Zhiqing

doi:10.1016/j.jallcom.2019.152183

Cited by 2 publications

(2 citation statements)

References 58 publications

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“…gd gc gte gte dse 4 shows the measured and simulated I-V characteristics for the 27-nm trench-gate-self-aligned In-Ga-Zn-Oxide FET. 40 As seen, both 1-segment and 50-segment simulations agree well with the measured data. This confirms that dividing the channel into the segments needed for an accurate simulation at high frequencies works at DC as well.…”

Section: Equivalent Circuit and Model Equationssupporting

confidence: 74%

Editors’ Choice—Thin Film Transistor Response in the THz Range

Shur

Liu²,

Ytterdal³

2023

ECS J. Solid State Sci. Technol.

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Novel metal oxide materials such as InGaZnO (IGZO), ZnO, SnO, and In2O3 and improved fabrication processes dramatically enhanced the achieved and projected thin film transistor (TFT) performance. The recorded values of the effective field-effect mobility of metal oxide TFT (MOTFT) materials have approached 150 cm2/Vs. We report on an improved compact TFT model based on three models: the RPI TFT model, the unified charge control model (UCCM), and the multi-segment TFT compact model. This improved model accounts for a non-exponential slope in the subthreshold regime by introducing a varying subthreshold slope and accounts for non-trivial capacitance dependence on the gate bias, and parasitic impedances. The analysis of the TFT response using this model and the analytical calculations show that TFTs could have a significant response to impinging THz and sub-THz radiation. Using a complementary inverter and the phase-matched THz signal feeding significantly improves the detection sensitivity.

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Section: Equivalent Circuit and Model Equationssupporting

confidence: 74%

Editors’ Choice—Thin Film Transistor Response in the THz Range

Shur

Liu²,

Ytterdal³

2023

ECS J. Solid State Sci. Technol.

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show abstract

“…(A) Carrier concentration; (B) Carrier mobility; (C) Density of states effective mass; (D) Calculated Pisarenko plots with different effective mass m d * and experimental results from this work and other reported literature 10,24‐27 in ZnO‐based thermoelectric materials [Color figure can be viewed at wileyonlinelibrary.com]…”

Section: Resultsmentioning

confidence: 88%

A sandwich structure assisted by defect engineering for higher thermoelectric performance in ZnO‐based films

Zhou

Zou

et al. 2020

J. Am. Ceram. Soc.

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Gallium (Ga) doping together with low dimensionality has been a promising approach to improve thermoelectric performance of zinc oxide (ZnO) materials, due to the increase of carrier concentration and suppression of phonon transport. So far, the highest power factor of Ga-doped ZnO (GZO) thin films has reached 280 μW m −1 K −2 , which is still limited for practical applications. In this work, we have simultaneously optimized the electrical conductivity and Seebeck coefficient of GZO thin films using the combination of oxygen defects and sandwich structure (GZO-ZnO-GZO). Benefiting from energy filtering effect at the interface between GZO and ZnO layers and high oxygen vacancy concentration, the density of states (DOS) effective mass has been increased together with a relatively high carrier concentration. As a result, an improved power factor value of 434 μW m −1 K −2 at 623 K has been achieved, which is comparable to the best values reported for ZnO-based films. This method of combining defect engineering and sandwich structure design shows great potential in enhancing the thermoelectric performance of ZnO-based thin films or other oxide materials. K E Y W O R D S defect engineering, electrical conductivity, energy filtering effects, GZO thin film, sandwich structure design How to cite this article: Zhou Z, Xu Y, Zou M, et al. A sandwich structure assisted by defect engineering for higher thermoelectric performance in ZnO-based films.

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Electron effective mass and electronic structure in nonstoichiometric amorphous Indium Gallium Zinc Oxide films

Cited by 2 publications

References 58 publications

Editors’ Choice—Thin Film Transistor Response in the THz Range

Editors’ Choice—Thin Film Transistor Response in the THz Range

A sandwich structure assisted by defect engineering for higher thermoelectric performance in ZnO‐based films

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