2006
DOI: 10.1103/physrevlett.96.087401
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Electron Dynamics of Silicon Surface States: Second-Harmonic Hole Burning onSi(111)(7×7)

Abstract: We report the first all-optical study of homogeneous linewidths of surface excitations by the spectral-hole-burning technique with surface-specific second-harmonic generation as a probe. Measurement of transient spectral holes induced by a 100 fs pump pulse in excitations of the surface dangling-bond states of Si(111)-(7 x 7) led to a pump-fluence-dependent homogeneous linewidth as broad as approximately 100 meV or a dephasing time as short as 15 fs. The hole-burning spectra also revealed a strong coupling bet… Show more

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Cited by 5 publications
(3 citation statements)
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References 35 publications
(24 reference statements)
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“…While all these examples represent basically static SH experiments for structural characterization of TMD materials, time-resolved SHG has been applied in particular to study the dynamics of various phenomena at surfaces and interfaces of bulk semiconductors. Its sensitivity to symmetry changes and to interface electronic states has been exploited for timedomain investigations of phase transformations [45,46], of adsorbate reactions [47], of interface-specific electron dynamics [48][49][50] and to detect transient electric fields at interfaces [51][52][53]. Those time-resolved experiments on TMD samples have to cope with the small flake/domain size of exfoliated and CVD grown samples available at the moment.…”
Section: Time-resolved Shg On Tmdsmentioning
confidence: 99%
“…While all these examples represent basically static SH experiments for structural characterization of TMD materials, time-resolved SHG has been applied in particular to study the dynamics of various phenomena at surfaces and interfaces of bulk semiconductors. Its sensitivity to symmetry changes and to interface electronic states has been exploited for timedomain investigations of phase transformations [45,46], of adsorbate reactions [47], of interface-specific electron dynamics [48][49][50] and to detect transient electric fields at interfaces [51][52][53]. Those time-resolved experiments on TMD samples have to cope with the small flake/domain size of exfoliated and CVD grown samples available at the moment.…”
Section: Time-resolved Shg On Tmdsmentioning
confidence: 99%
“…Time-resolved SHG has also been applied to study the dynamics of various phenomena at surfaces and interfaces of bulk semiconductors. Its sensitivity to symmetry changes and to interface electronic states has been exploited for time-domain investigations of phase transformations [54,55], of adsorbate reactions [56], of interface-specific electron dynamics [57][58][59] and to the detection of transient electric fields at interfaces [60][61][62]. One has to point out that the high sensitivity of SHG to the discussed quantities allows one to explore very small effects.…”
Section: Time-resolved Shg On Tmdcsmentioning
confidence: 99%
“…Only a few recent examples can be mentioned in this overview. SHG spectral hole burning in the dangling bond states of Si(111)-7 × 7, using 100 fs pulses, revealed strong coupling between these localized surface states and a surface phonon mode [126]. Pump-probe techniques are also used to measure slower processes.…”
Section: Temporal Studiesmentioning
confidence: 99%