Electron dynamics in InNxSb1−x

Abstract

Electron transport properties in InN x Sb 1Ϫx are investigated for a range of alloy compositions. The band structure of InN x Sb 1Ϫx is modeled using a modified k"p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E Ϫ subband. These calculations reveal that for alloy compositions in the range 0.001рxр0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InN x Sb 1Ϫx alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated.

The electronic band structures of , and alloys

“…It was experimentally indicated that [14][15][16][17], this atmospheric transition can access the range of 8-15 m when a small fraction of antimony is replaced by nitrogen in InSb. Time resolved optical measurements [15] have been used to observe an absorption edge of 15 m at 290 K in an alloy with a nominal composition of InN 0.006 As 0.994 .…”

“…To the knowledge of authors, there are a few works [9,10,[14][15][16][17]19,27] in which the electronic band structures of these ternary alloys have been studied theoretically. In most of these theoretical works, the ternary alloys were defined by only specific concentrations of N and As [9,[14][15][16][17]27]. In the present work, the electronic band structures of InN x As 1−x , InN x Sb 1−x and InAs x Sb 1−x alloys are calculated by empirical tight binding (ETB) method.…”

“…Katırcıoglu). changes of the electronic properties [8][9][10][11][12][13][14][15][16][17]. On the other hand, the substitution of a small amount of As in InSb indicates the similar drastic changes on the electronic properties of InSb compound [18][19][20][21][22][23][24][25][26][27][28].…”

“…The most important effect of the substitutions in these InN x As 1−x , InN x Sb 1−x and InAs x Sb 1−x alloys is large reduction of the fundamental band gap (E Γ g ) of InAs and InSb. In the literature, the aim dependent reduction of the fundamental energy gap has been tuned by the substituent compositions in InNAs, InNSb and InAsSb alloys [8,[11][12][13][14][15][16][17][18][20][21][22][23][24][25][26][27] grown by molecular beam epitaxy (MBE) [12,[14][15][16][17]21,22,24], metal organic chemical vapor deposition (MOCVD) [8,11,13,23,25], Bridgman [26] and hotwall epitaxy (HWE) [28] methods. Therefore, these ternary alloys are potential materials for room temperature infrared detectors, gas sensors and lasers operating in near-infrared (0.9-1.3 m), mid-infrared (2-5 m) and far infrared (8-12 m) regions [13,17,[21][22][23][24][25][26].…”

Effect of hydrogen in dilute InNxSb1−x alloys grown by molecular beam epitaxy

“…However, an increased x value does not necessarily increase the effective mass at the Fermi level. 16 Nitrogen in the dilute InN x Sb 1Ϫx alloys grown using a mixed nitrogen and hydrogen plasma has been found to be bonded to both In and Sb and is also located in N-H complexes. Annealing for 8 h at 300°C partially removes hydrogen from N-H complexes and increases the amount of N bonded to In.…”