Electron drift velocity in silane in strong electric fields determined from rf breakdown curves

Lisovskiy, Valeriy; Booth, Jean‐Paul; Landry, K.; Douai, D.; Cassagne, V.; Yegorenkov, Vladimir

doi:10.1088/0022-3727/40/11/022

Cited by 8 publications

(9 citation statements)

References 29 publications

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“…It should be noted that at high rf frequencies there can be a phase shift between the field and the drift velocity, but this does not affect the measurement. The method is simple and gives good agreement with the data obtained by other techniques and numerical calculations (see, e.g., [16,17,22,23,32,33]). The Lisovskiy-Yegorenkov method is accessible to many researchers.…”

Section: Validity Of the Determination Of Electron Drift Velocity Fro...supporting

confidence: 58%

Electron drift velocity in SF₆ in strong electric fields determined from rf breakdown curves

Lisovskiy¹,

Yegorenkov²,

Booth³

et al. 2010

J. Phys. D: Appl. Phys.

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This paper presents measurements of the electron drift velocity V dr in SF6 gas for high reduced electric fields (E/N = 330–5655 Td (1 Td = 10−17 V cm2)). The drift velocities were obtained using the method of Lisovskiy and Yegorenkov (1998 J. Phys. D: Appl. Phys. 31 3349) based on the determination of the pressure and voltage of the turning points of rf capacitive discharge breakdown curves for a range of electrode spacings. The V dr values thus obtained were in good agreement with those calculated from the cross-sections of Phelps and Van Brunt (1988 J. Appl. Phys. 64 4269) using the BOLSIG code. The validity of the Lisovskiy–Yegorenkov method is discussed and we show that it is applicable over the entire E/N range where rf discharge ignition at breakdown occurs for rf frequencies of 13.56 MHz or above.

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Section: Validity Of the Determination Of Electron Drift Velocity Fro...supporting

confidence: 58%

Electron drift velocity in SF₆ in strong electric fields determined from rf breakdown curves

Lisovskiy¹,

Yegorenkov²,

Booth³

et al. 2010

J. Phys. D: Appl. Phys.

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“…Observation (ii) has already been reported elsewhere. 35,36 For a given pressure, more electrons are lost in collisions in a SiH 4 plasma than in a H 2 plasma; hence, a higher power is needed.…”

Section: (Ii)mentioning

confidence: 99%

Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency

Stückelberger

Despeisse

Bugnon

et al. 2013

Journal of Applied Physics

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Several amorphous silicon (a-Si:H) deposition conditions have been reported to produce films that degrade least under light soaking when incorporated into a-Si:H solar cells. However, a systematic comparison of these a-Si:H materials has never been presented. In the present study, different plasma-enhanced chemical vapor deposition conditions, yielding standard low-pressure VHF a-Si:H, protocrystalline, polymorphous, and high-pressure RF a-Si:H materials, are compared with respect to their optical properties and their behavior when incorporated into single-junction solar cells. A wide deposition parameter space has been explored in the same deposition system varying hydrogen dilution, deposition pressure, temperature, frequency, and power. From the physics of layer growth, to layer properties, to solar cell performance and light-induced degradation, a consistent picture of a-Si:H materials that are currently used for a-Si:H solar cells emerges. The applications of these materials in single-junction, tandem, and triple-junction solar cells are discussed, as well as their deposition compatibility with rough substrates, taking into account aspects of voltage, current, and charge collection. In sum, this contributes to answering the question, “Which material is best for which type of solar cell?”

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“…papers were devoted to gas breakdown in rf electric field (see [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]). It is associated with a broad application of rf discharge in plasma technology processes as well as with an opportunity to determine the electron drift velocity in a strong rf electric field (see [13,16] and the references cited therein).…”

mentioning

confidence: 99%

“…As is known [10,11,13,[15][16][17][18], an rf breakdown curve contains a region of multi-valued dependence of the breakdown rf voltage U rf on the gas pressure p in the range of low gas pressure values. The presence of this region is associated with an enhanced flow of electrons out of the interelectrode gap due to the drift motion in the rf field when the amplitude A of the electron displacement in the rf field is close to one-half of the inter-electrode distance L. The rf breakdown curve usually consists of the diffusion-drift, Paschen and multipactor branches [13].…”

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confidence: 99%

Similarity law for rf breakdown

Lisovskiy¹,

Booth

Landry³

et al. 2008

Europhys. Lett.

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This paper demonstrates that the similarity law for the rf gas breakdown has the form U rf = ψ(p • L, L/R, f • L)(where U rf is the rf breakdown voltage, p is the gas pressure, L and R are the length and diameter of the discharge tube, respectively, f is the frequency of the rf electric field). It means that two rf breakdown curves registered for narrow inter-electrode gaps or in geometrically similar tubes and depicted in the U rf (p • L) graph will coincide only when the condition f • L = const is met. This similarity law follows from the rf gas breakdown equation and it is well supported by the results of measurements.

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Electron drift velocity in silane in strong electric fields determined from rf breakdown curves

Cited by 8 publications

References 29 publications

Electron drift velocity in SF₆ in strong electric fields determined from rf breakdown curves

Electron drift velocity in SF₆ in strong electric fields determined from rf breakdown curves

Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency

Similarity law for rf breakdown

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Electron drift velocity in silane in strong electric fields determined from rf breakdown curves

Cited by 8 publications

References 29 publications

Electron drift velocity in SF6 in strong electric fields determined from rf breakdown curves

Electron drift velocity in SF6 in strong electric fields determined from rf breakdown curves

Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency

Similarity law for rf breakdown

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Electron drift velocity in SF₆ in strong electric fields determined from rf breakdown curves

Electron drift velocity in SF₆ in strong electric fields determined from rf breakdown curves