Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

Ardaravičius, L.; Ramonas, M.; Liberis, J.; Kiprijanovič, O.; Matulionis, A.; Xie, J.; Wu, M.; Leach, J. H.; Morkoç̌, H.

doi:10.1063/1.3236569

Cited by 39 publications

(44 citation statements)

References 46 publications

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“…IV. A normally-off type GaN-based HEMT has recently been fabricated by using an ultrathin In 0.17 Al 0.83 N ͑1 nm͒/AlN ͑1 nm͒ barrier, 10 which supports our results because the barrier thickness and the sum of interface charges 8 are close to those of the In 0.17 Al 0.83 N ͑2.5 nm͒/GaN sample.…”

Section: ⌬Esupporting

confidence: 86%

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Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Akazawa

Gao

Hashizume

et al. 2011

Journal of Applied Physics

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The valence band offsets, ⌬E V , of In 0.17 Al 0.83 N / GaN, In 0.25 Al 0.75 N / GaN, and In 0.30 Al 0.70 N / GaN heterostructures grown by metal-organic vapor phase epitaxy were evaluated by using x-ray photoelectron spectroscopy ͑XPS͒. The dependence of the energy position and the full width at half maximum of the Al 2p spectrum on the exit angle indicated that there was sharp band bending caused by the polarization-induced electric field combined with surface Fermi-level pinning in each ultrathin InAlN layer. The ⌬E V values evaluated without taking into account band bending indicated large discrepancies from the theoretical estimates for all samples. Erroneous results due to band bending were corrected by applying numerical calculations, which led to acceptable results. The evaluated ⌬E V values were 0.2Ϯ 0.2 eV for In 0.17 Al 0.83 N / GaN, 0.1Ϯ 0.2 eV for In 0.25 Al 0.75 N / GaN, and 0.0Ϯ 0.2 eV for In 0.30 Al 0.70 N / GaN. Despite the large decrease of around 1.0 eV in the band gap of InAlN layers according to the increase in the In molar fraction, the decrease in ⌬E V was as small as 0.2 eV. Therefore, the change in band-gap discontinuity was mainly distributed to that in conduction band offset.

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Section: ⌬Esupporting

confidence: 86%

“…Similar results have previously been reported. [6][7][8] In XPS measurement, only shallow parts of InAlN layers were probed as shown in Fig. 3͑b͒ for the samples with thick InAlN layers with 2DEG, resulting in no detection of the Ga 3d spectrum from the host GaN layer.…”

Section: ⌬Ementioning

confidence: 99%

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Akazawa

Gao

Hashizume

et al. 2011

Journal of Applied Physics

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“…The cut-off frequency is related to the average carrier velocity in a two-dimensional electron gas (2DEG) channel. The experimental reports show that the room temperature electron velocity values in GaN-based 2DEG channels lie between (1-3)×10 7 cm/s [3][4][5][6][7][8][9]. While the low-field electron mobility tends to decrease as the density of 2DEG increases, the high-field drift velocity is not a monotonous function of the density [10].…”

Section: Introductionmentioning

confidence: 99%

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Ardaravičius¹,

Kiprijanovič²,

Liberis³

2017

Lith. J. Phys.

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Longitudinal hot-electron transport is investigated for the alloy-free AlGaN/AlN/{GaN/AlN/GaN} heterostructure at electric fields up to 380 kV/cm. The structure featured a coupled channel with a camelback electron density profile. The hot-electron drift velocity in the coupled channel is estimated as ~1.5×10 7 cm/s and is ~50% higher as compared with the standard AlN-spacer GaN 2DEG channel. The HFET with the pristine 2DEG density of 1.75×1013 cm -2 confined in the coupled channel demonstrates the optimal frequency performance in terms of electron velocity at a relatively low gate bias of V GS = -1.75 V. These results are consistent with the ultra-fast decay of hot phonons.

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“…Recently, electron drift velocity has been measured for AlInN/AlN/GaN HEMT [8] and ungated [9,10] channels. The intrinsic electron velocity of the HEMT with a gate length of 1 µm was estimated as ≈ 1 × 10 7 cm/s [8], while for the same In composition (x = 0.15) containing the ungated 2DEG channel ≈ 1.6 × 10 7 cm/s at 65 kV/cm [10].…”

Section: Introductionmentioning

confidence: 99%

Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels

2011

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Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained Al0.8In0.2N/AlN/GaN and nearly lattice matched Al0.84In0.16N/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × 10 7 cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.

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Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

Cited by 39 publications

References 46 publications

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Electron transport in a coupled GaN/AlN/GaN channel of nitride HFET

Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels

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