We investigate the low-temperature Hall effect in electron-doped La 2−x Ce x CuO 4 thin films from heavily underdoped x = 0.06 to heavily overdoped x = 0.17. With increasing x, the charge carriers that dominate the Hall effect gradually change from electronlike to holelike. From the Hall coefficient and differential Hall coefficient, we infer that a large holelike Fermi surface forms above x = 0.15, that is, the electronlike pocket may exist until x = 0.15. Meanwhile, the sign of the Hall resistivity changes from negative ͑x = 0.105͒ to positive ͑x = 0.12͒ at 2 K, indicating that single electron pocket exists below x = 0.105 at low temperature.