Electron direct tunneling time in heterostructures with nanometer-thick trapezoidal barriers

Khairurrijal, Khairurrijal; Noor, Fatimah A.; Sukirno,

doi:10.1016/j.sse.2005.03.016

Cited by 13 publications

(12 citation statements)

References 22 publications

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“…The direct tunneling time τ of an electron through the barrier into the quantum dot of the SES can be obtained by using the Wigner phase time approach [14].…”

Section: B Time Scale Of Electron Injection Into the Sesmentioning

confidence: 99%

THz detection cell for sub-wavelength bio-molecular sensing

Woolard

Zhao

2007

2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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Design rules for a novel terahertz (THz) detection cell are presented that offer the potential for the first-time development of a microscope-system capable of collecting THz-frequency (e.g., 0.3-1.0 THz) spectroscopic signatures directly from microscopic targets such as bio-molecules. The proposed technological approach utilizes the sequential transfer of single electrons through a system of coupled quantum dots that has been designed to facilitate a statistically-based measurement of the radiation intensity. This paper focuses on the design of a suitable Single-Electron Source (SES) that allows for required injection characteristics for a previously defined THz Radiation Detection Cell (THz RDC).Index Terms-direct tunneling time, coupled quantum, single electron source, THz sensor

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“…The direct tunneling time τ of an electron through the barrier into the quantum dot of the SES can be obtained by using the Wigner phase time approach [14].…”

Section: B Time Scale Of Electron Injection Into the Sesmentioning

confidence: 99%

THz detection cell for sub-wavelength bio-molecular sensing

Woolard

Zhao

2007

2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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“…Several methods have been utilized to compute a transmittance and tunneling current in high-κ gate stack based MOS capacitors [11][12][13][14][15][16][17]. However, they did not consider the coupling effects between longitudinal and transverse motions and anisotropic mass in the MOS capacitors.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

et al. 2012

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Kata kunci: arus terobosan, kecepatan gerbang, massa anisotropik, material berkonstanta dielektrik tinggi, metode transfer matriks. Abstract In this paper, we have developed a model of the tunneling current through a high-dielectric IntroductionIt is known that silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are aggressively scaled down to the sub-micrometer regime and below for emerging applications required higher speed, higher density and lower voltage operation [1][2]. In order to fulfill these aims, it is required a thinner SiO 2 gate oxide. However, a vast tunneling current arises and power dissipation becomes significantly high when the gate oxide thickness is less than 1.5 nm [3]. In order to solve these problems, it is needed a high-κ dielectric with equivalent electrical oxide thickness but higher physical thicknesses to replace SiO 2 such as [4][5][6][7]. Since having good dielectric properties and good thermal stability on silicon substrates, Hf-based silicates are the promising candidate to replace SiO 2 compared to other high-κ materials [8][9][10]. The gate oxides anticipated to substitute SiO 2 are a stack of an ultrathin SiO 2 and a high-κ layer, which is known as a high-κ gate stack, because an ultrathin SiO 2 often grows during fabrication process [3].

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“…Electron transmittance, tunneling time and current in MOS capacitors have been investigated under an isotropic mass approach and without considering a coupling effect between parallel and perpendicular motions by employing the parabolic E-k dispersion relationship [5], [7]- [11]. However, the tunneling currents in the MOS capacitor fit well to the measured ones only for the oxide voltages less than 1.5 V and get significantly greater than the measured one at oxide voltages above 1.5 V [5].…”

Section: Introductionmentioning

confidence: 99%

Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses

Noor¹,

Abdullah²,

Sukirno³

et al. 2010

Braz. J. Phys.

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An electron direct tunneling current model of n + − poly − Si/SiO 2 /p − Si(100) metal-oxide-semiconductor (MOS) capacitors has been developed by considering a parallel-perpendicular kinetic energy coupling, which is represented by the gate electron phase velocity, and anisotropic masses under a parabolic E-k dispersion relationship. The electron effective mass in the oxide and the electron phase velocity in the n + poly − Si gate are the only two fitting parameters to compare calculated tunneling currents to measured ones. It was obtained that the calculated tunneling currents fit well to the measured ones. The electron effective mass in the oxide layer tends to increase with decreasing the oxide thickness. In addition, the gate electron velocity is a constant of 1 × 10 5 m/s. Moreover, the theoretical model offers a simple treatment and an accurate result in obtaining the tunneling current.

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Electron direct tunneling time in heterostructures with nanometer-thick trapezoidal barriers

Cited by 13 publications

References 22 publications

THz detection cell for sub-wavelength bio-molecular sensing

THz detection cell for sub-wavelength bio-molecular sensing

Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses

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